Nitride semiconductor laser element
View Patent ↗Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.
1. A nitride semiconductor laser element comprising:
a semiconductor laminate made of a group III nitride semiconductor and including a light-emitting end surface; and
a protection film formed of a dielectric multilayer film formed to cover the light-emitting end surface of the semiconductor laminate,
wherein the protection film includes an end surface protection layer and an oxygen diffusion suppressing layer, and the end surface protection layer and the oxygen diffusion suppressing layer are disposed in order of the end surface protection layer and the oxygen diffusion suppressing layer from a side of the light-emitting end surface;
the end surface protection layer is a layer including a crystalline aluminum nitride film;
the oxygen diffusion suppressing layer includes at least a single layer of a metal oxide film and at least a single layer of a silicon oxide film, and the silicon oxide film and the metal oxide film are disposed in this order from a side of the end surface protection layer; and
the metal oxide film is crystallized by laser light emitted from the light-emitting end surface, and
the metal oxide film is aluminum oxide film.
2. A nitride semiconductor laser element comprising:
a semiconductor laminate made of a group III nitride semiconductor and including a light-emitting end surface; and
a protection film formed of a dielectric multilayer film formed to cover the light-emitting end surface of the semiconductor laminate,
wherein the protection film includes an end surface protection layer and an oxygen diffusion suppressing layer, and the end surface protection layer and the oxygen diffusion suppressing layer are disposed in order of the end surface protection layer and the oxygen diffusion suppressing layer from a side of the light-emitting end surface;
the end surface protection layer is a layer including a crystalline aluminum nitride film;
the oxygen diffusion suppressing layer includes at least a single layer of a metal oxide film and at least two layers of silicon oxide film, and the silicon oxide film is sandwiched by the two layers of the silicon oxide film; and
the metal oxide film is crystallized by laser light emitted from the light-emitting end surface, and
the metal oxide film is aluminum oxide film.
3. The nitride semiconductor laser element according to claim 1 ,
wherein the end surface protection layer includes a first aluminum nitride film that directly covers the light-emitting end surface, a first metal oxide film that is disposed to cover the first aluminum nitride film, and a second aluminum nitride film that is disposed to cover the first metal oxide film.
4. The nitride semiconductor laser element according to claim 3 ,
wherein the first metal oxide film is an aluminum oxide film.
5. The nitride semiconductor laser element according to claim 3 ,
wherein the first aluminum nitride film includes a main component of an m-axis orientation with respect to the light-emitting end surface, and
the second aluminum nitride film includes a main component of a c-axis orientation.
6. The nitride semiconductor laser element according to claim 1 ,
wherein a reflectance of the light-emitting end surface of the nitride semiconductor laser element is either a maximum value or a minimum value of a reflectance spectrum for a wavelength of laser light emitted from the light-emitting end surface.
7. The nitride semiconductor laser element according to claim 1 ,
wherein a region in the metal oxide film crystallized by the laser light is a region of a near field image of the laser light.
8. A nitride semiconductor laser element comprising:
a semiconductor laminate made of a group III nitride semiconductor and including a light-emitting end surface; and
a protection film formed of a dielectric multilayer film formed to cover the light-emitting end surface of the semiconductor laminate,
wherein the protection film includes an end surface protection layer and an oxygen diffusion suppressing layer, and the end surface protection layer and the oxygen diffusion suppressing layer are disposed in order of the end surface protection layer and the oxygen diffusion suppressing layer from a side of the light-emitting end surface;
the end surface protection layer is a layer including a crystalline aluminum nitride film;
the oxygen diffusion suppressing layer includes at least a single layer of a metal oxide film and at least a single layer of a silicon oxide film, and the silicon oxide film and the metal oxide film are disposed in this order from a side of the end surface protection layer; and
the metal oxide film is crystallized by laser light emitted from the light-emitting end surface, and
the metal oxide film is aluminum oxide film.
9. A nitride semiconductor laser element comprising:
a semiconductor laminate made of a group III nitride semiconductor and including a light-emitting end surface; and
a protection film formed of a dielectric multilayer film formed to cover the light-emitting end surface of the semiconductor laminate,
wherein the protection film includes an end surface protection layer and an oxygen diffusion suppressing layer, and the end surface protection layer and the oxygen diffusion suppressing layer are disposed in order of the end surface protection layer and the oxygen diffusion suppressing layer from a side of the light-emitting end surface;
the end surface protection layer is a layer including a crystalline aluminum nitride film;
the oxygen diffusion suppressing layer includes at least a single layer of a metal oxide film and at least two layers of silicon oxide film, and the silicon oxide film is sandwiched by the two layers of the silicon oxide film; and
the metal oxide film is crystallized by laser light emitted from the light-emitting end surface, and
the metal oxide film is aluminum oxide film.
10. The nitride semiconductor laser element according to claim 8 ,
wherein the end surface protection layer includes a first aluminum nitride film that directly covers the light-emitting end surface, a first metal oxide film that is disposed to cover the first aluminum nitride film, and a second aluminum nitride film that is disposed to cover the first metal oxide film.
11. The nitride semiconductor laser element according to claim 10 ,
wherein the first aluminum nitride film includes a main component of an m-axis orientation with respect to the light-emitting end surface, and
the second aluminum nitride film includes a main component of a c-axis orientation.
12. The nitride semiconductor laser element according to claim 10 ,
wherein atomic composition of nitrogen in the first aluminum nitride film and the second aluminum nitride film is 40% or more.
13. The nitride semiconductor laser element according to claim 1 , wherein the light-emitting end surface is front end surface.
14. The nitride semiconductor laser element according to claim 8 , wherein the light-emitting end surface is front end surface.