Imaging device with filtering of the infrared radiation
An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
1. A method for filtering comprising:
sensing radiation illuminating a photosite disposed in a semiconducting substrate, the semiconducting substrate comprises a first n-doped layer, a second n-doped layer, a first p-doped layer, and a second p-doped layer, the sensing comprising providing a non-zero first voltage directly at the first n-doped layer and providing a constant zero voltage directly at the first p-doped layer; and
filtering undesired radiation illuminating the photosite disposed in the semiconducting substrate, wherein
the filtering is carried out using a filtering device in the semiconducting substrate at a depth that is a function of a wavelength of the undesired radiation,
the filtering comprises applying a constant non-zero second voltage directly at the second n-doped layer to carry away charges generated as a result of the undesired radiation and applying the constant zero voltage directly at the second p-doped layer, wherein the second voltage is greater than the first voltage, and
sensing the radiation and filtering the undesired radiation are simultaneously carried out at the photosite.
2. The method according to claim 1 , wherein the undesired radiation comprises infrared radiation and the filtering is carried out in the semiconducting substrate at a depth of between 2 μm and 5 μm.
3. The method according to claim 1 , wherein the filtering device includes a second semiconducting junction located beneath a first semiconducting junction of the photosite and wherein the filtering further comprises trapping electrons created in the second semiconducting junction.
4. The method according to claim 3 , wherein the second semiconducting junction is polarized at a second polarization potential greater than a first polarization potential of the first semiconducting junction, and wherein the second polarization potential is applied by the second voltage.
5. The method of claim 3 , wherein the filtering is performed at a plurality of photosites disposed in the semiconducting substrate, the plurality of photosites together comprising two continuous semiconducting layers that form the second semiconducting junction, wherein each of the plurality of photosites comprises a first semiconducting junction located above the second semiconducting junction.
6. The method of claim 3 , wherein the filtering is performed at a first plurality of photosites arranged in rows, the rows further comprising a second plurality of photosites for which the filtering is not performed, wherein each of the first plurality of photosites comprises a second semiconducting junction located beneath a first semiconducting junction.
7. A method for filtering comprising:
generating electrons at a first semiconductor junction in a substrate;
sensing the electrons generated at the first semiconductor junction and providing a non-zero first voltage directly at a first n-doped layer of the first semiconductor junction and providing a constant zero voltage directly at a first p-doped layer of the first semiconductor junction;
generating electrons at a second semiconductor junction in the substrate, the second semiconductor junction arranged vertically in line with the first semiconductor junction;
applying the constant zero voltage directly at a second p-doped layer of the second semiconductor junction; and
applying a continuous non-zero polarizing second voltage directly at a second n-doped layer of the second semiconductor junction, wherein the second voltage is greater than the first voltage.
8. The method according to claim 7 , wherein the second semiconductor junction is arranged in the substrate at a depth of between 2 μm and 5 μm.
9. The method according to claim 7 , wherein the second semiconductor junction is arranged beneath the first semiconductor junction.
10. The method according to claim 9 , wherein the second semiconductor junction is polarized at a second polarization potential greater than a first polarization potential of the first semiconductor junction, and wherein the second polarization potential is applied by the continuous non-zero polarizing second voltage.
11. The method of claim 9 , wherein the filtering is performed at a plurality of photosites disposed in the substrate, the plurality of photosites together comprising two continuous semiconductor layers that form the second semiconductor junction, wherein each of the plurality of photosites comprises a first semiconductor junction located above the second semiconductor junction.
12. The method of claim 9 , wherein the filtering is performed at a first plurality of photosites arranged in rows, the rows further comprising a second plurality of photosites for which the filtering is not performed, wherein each of the first plurality of photosites comprises a second semiconductor junction located beneath a first semiconductor junction.
13. A method of filtering comprising:
sensing, during a sense mode, electrons generated at a first semiconductor junction in a substrate at a first polarization potential;
continuously filtering, during an entirety of the sense mode, electrons generated at a second semiconductor junction in the substrate, wherein
the second semiconductor junction is vertically aligned with the first semiconductor junction, and
continuously filtering comprises continuously applying a second polarization potential directly at a p-doped layer of the second semiconductor junction, and the second polarization potential being greater than the first polarization potential to remove the electrons generated at the second semiconductor junction; and
removing, during a reset mode, electrons generated at the first semiconductor junction.
14. The method of claim 13 , wherein continuously filtering electrons generated at the second semiconductor junction comprises applying a continuous polarizing voltage at the second semiconductor junction so that electrons generated at the second semiconductor junction cannot be sensed.
15. The method of claim 13 , further comprising filtering, during the reset mode, electrons generated at the second semiconductor junction in the substrate.
16. The method according to claim 13 , wherein the second semiconductor junction is arranged in the substrate at a depth of between 2 μm and 5 μm.
17. The method according to claim 13 , wherein continuously filtering further comprises trapping electrons created in the second semiconductor junction located beneath the first semiconductor junction.
18. The method according to claim 17 , wherein the second semiconductor junction is polarized at a second polarization potential greater than a first polarization potential of the first semiconductor junction, wherein the electrons generated at the second semiconductor junction are a result of an infrared radiation.
19. The method of claim 17 , wherein the filtering is performed at a plurality of photosites disposed in the substrate, the plurality of photosites together comprising two continuous semiconductor layers that form the second semiconductor junction, wherein each of the plurality of photosites comprises a first semiconductor junction located above the second semiconductor junction.
20. The method of claim 17 , wherein the filtering is performed at a first plurality of photosites arranged in rows, the rows further comprising a second plurality of photosites for which the filtering is not performed, wherein each of the first plurality of photosites comprises a second semiconductor junction located beneath a first semiconductor junction.