Nonvolatile memory device and method for manufacturing the same
View Patent ↗A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.
1. A nonvolatile memory device comprising:
an insulating layer;
a plurality of oxygen diffusion prevention layers disposed on the insulating layer;
a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer; and
a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs,
wherein each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements, and
wherein each of the plurality of the resistance-variable elements includes:
a first electrode;
a second electrode disposed above the first electrode; and
a resistance-variable layer which is disposed between the first electrode and the second electrode, and resistance value of the resistance-variable layer changing reversibly on the basis of an electrical signal provided between the first electrode and the second electrode.
2. The nonvolatile memory device according to claim 1 ,
wherein each of the plurality of the resistance-variable elements further includes a sidewall protection layer that covers a sidewall of each of the plurality of the resistance-variable elements and that is composed of an insulating material.
3. The nonvolatile memory device according to claim 1 ,
wherein each of the plurality of the resistance-variable elements further includes a sidewall protection layer that covers a sidewall of each of the plurality of the resistance-variable elements and that is composed of an insulating material, and
in a thickness direction of the insulating layer, an outer periphery of the sidewall protection layer is flush with an outer periphery of the corresponding oxygen diffusion prevention layer.
4. The nonvolatile memory device according to claim 1 ,
wherein each of the plurality of the oxygen diffusion prevention layers is composed of at least one selected from the group consisting of nitrides, oxygen-deficient silicon oxides, oxygen-deficient aluminum oxides, and oxygen-deficient titanium oxides.
5. The nonvolatile memory device according to claim 1 ,
wherein a peripheral edge of each of the resistance-variable layers is oxidized.
6. The nonvolatile memory device according to claim 2 ,
wherein the sidewall protection layer and the oxygen diffusion prevention layers are composed of the same material.
7. The nonvolatile memory device according to claim 3 ,
wherein the sidewall protection layer and the oxygen diffusion prevention layers are composed of the same material.