IP Library Granted Patent US 9,570,098
Granted Patent B2
US 9,570,098 · App. 14/561,840 · Granted Feb 14, 2017

Methods of forming near field transducers and near field transducers formed thereby

Inventors: Sethuraman Jayashankar (Excelsior, MN); Hui Brickner (Bloomington, MN)
Assignee: Seagate Technology LLC
G11B5/3163G11B5/314G11B2005/0021
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Quick Facts
Patent No.
US 9,570,098
App. No.
14/561,840
Granted
Feb 14, 2017
Kind
B2
Abstract

A method of forming a near field transducer (NFT), the method including the steps of depositing a plasmonic material; depositing an encapsulant material on at least a portion of the plasmonic material; and implanting ions into at least a portion of the plasmonic material through the encapsulant material.

Claims (23)

1. A method of forming a near field transducer (NFT), the method comprising the steps of:

depositing a plasmonic material;

depositing an encapsulant material on at least a portion of the plasmonic material; and

implanting ions into at least a portion of the plasmonic material through the encapsulant material.

2. The method according to claim 1 , wherein the plasmonic material is at least partially fabricated before the encapsulant material is deposited thereon.

3. The method according to claim 2 , wherein at least partially fabricated comprises defining a peg, forming a peg, or some combination thereof.

4. The method according to claim 1 , wherein the encapsulant material is deposited on plasmonic material that forms a peg of a NFT, on plasmonic material that forms a disc of a NFT, or on plasmonic material that forms both a peg and a disc of a NFT.

5. The method according to claim 1 , wherein the encapsulant material comprises dielectric material.

6. The method according to claim 1 , wherein the encapsulant material comprises diamond like carbon (DLC), and the plasmonic material is present on a device that includes a plurality of magnetic recording heads.

7. The method according to claim 1 , wherein the encapsulant material is deposited to a thickness from about 2 nm to about 50 nm.

8. The method according to claim 1 , wherein implanting ions into at least a portion of the plasmonic material comprises patterning steps.

9. The method according to claim 1 further comprising etching at least a portion of the encapsulant material after implanting ions into at least a portion of the plasmonic material.

10. The method according to claim 1 further comprising depositing additional encapsulant material after implantation of ions into at least a portion of the plasmonic material.

11. A method of forming a near field transducer (NFT), the method comprising the steps of:

depositing a plasmonic material;

depositing an encapsulant material on at least a portion of the plasmonic material;

implanting ions into at least a portion of the plasmonic material through the encapsulant material; and

forming a NFT from the plasmonic material.

12. The method according to claim 11 , wherein the NFT is formed from the plasmonic material before the encapsulant material is deposited thereon.

13. The method according to claim 11 , wherein the NFT includes a peg, a disc, and a heat sink and the encapsulant material is deposited on at least a portion of the peg, the disc and the heat sink.

14. The method according to claim 11 , wherein the encapsulant material comprises a dielectric material and the dielectric material is deposited to a thickness from about 2 nm to about 50 nm.

15. The method according to claim 11 further comprising etching at least a portion of the encapsulant material after implanting ions into at least a portion of the plasmonic material and depositing additional encapsulant material after implantation of ions into at least a portion of the plasmonic material.

16. The method according to claim 1 , wherein implanting ions into at least a portion of the plasmonic material comprises patterning steps.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2014
From: JAYASHANKAR, SETHURAMAN; BRICKNER, HUI
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 034394/0770 →
Continuity (3)
Provisional Application 61912798 · Dec 6, 2013
Provisional Application 61912899 · Dec 6, 2013
Related Publication 20150162030A1 · Jun 11, 2015