Resistive random access memory and method for manufacturing the same
A resistive random access memory (RRAM) including a substrate, a dielectric layer, memory cells and an interconnect structure is provided. The dielectric layer is disposed on the substrate. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first electrode, a second electrode and a variable resistance structure. The second electrode is disposed on the first electrode. The variable resistance structure is disposed between the first electrode and the second electrode. In two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other. The interconnect structure is disposed in the dielectric layer and connects the first electrodes of the memory cells.
1. A resistive random access memory, comprising:
a substrate;
a dielectric layer, disposed on the substrate;
a plurality of memory cells, vertically and adjacently disposed in the dielectric layer, and each of the memory cells comprises:
a first electrode;
a second electrode, disposed on the first electrode; and
a variable resistance structure, disposed between the first electrode and the second electrode, wherein
in the vertically adjacent two memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other, and the variable resistance structure further comprises a variable resistance layer and an insulation layer stacked with the variable resistance layer; and
an interconnect structure, disposed in the dielectric layer and connecting the first electrodes of the memory cells.
2. The resistive random access memory according to claim 1 , wherein a material of the variable resistance structure comprises metal oxide.
3. The resistive random access memory according to claim 2 , wherein the metal oxide comprises hafnium oxide, magnesium oxide, nickel oxide, niobium oxide, titanium oxide, aluminum oxide, vanadium oxide, tungsten oxide, zinc oxide or cobalt oxide.
4. The resistive random access memory according to claim 1 , wherein a material of the insulation layer comprises oxide.
5. The resistive random access memory according to claim 1 , wherein the first electrode is a part of the interconnect structure.
6. The resistive random access memory according to claim 1 , further comprising:
a transistor, disposed on the substrate and having a terminal connected with the interconnect structure.