Semiconductor device and method of manufacturing the same
A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film ( 2 ) is formed over a substrate ( 1 ), a graphene layer ( 3 ) is grown originating from the catalyst film ( 2 ), an electrode ( 4 ) in contact with the graphene layer ( 3 ) is formed, and the catalyst film ( 2 ) is removed.
1. A method of manufacturing a semiconductor device, comprising:
forming a catalyst film over an insulator;
growing a graphene layer originating from the catalyst film;
forming a conductive film in contact with the graphene layer, over the insulator;
removing the catalyst film;
forming a gate insulation film over the graphene layer; and
forming a top gate electrode over the gate insulation film.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a second gate insulation film between the insulator and the graphene layer; and
forming a back gate electrode at a position where the second gate insulation film is sandwiched between the back gate electrode and the graphene layer.
3. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
making a first part of the graphene layer located on one side of the conductive film thinner than a second part of the graphene layer located on another side of the conductive film;
forming a second gate insulation film between the insulator and the first part; and forming a back gate electrode at a position where the second gate insulation film is sandwiched between the back gate electrode and the first part.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the graphene layer is grown from both uppers surface and lower surface of the catalyst film.
5. The method of manufacturing a semiconductor device according to claim 4 , further comprising:
removing a part of a portion of the graphene layer grown from the lower surface of the catalyst film;
forming a second gate insulation film between the insulator and a portion of the graphene layer grown from the upper surface of the catalyst film; and
forming a back gate electrode at a position where the second gate insulation film is sandwiched between the back gate electrode and the graphene layer.