IP Library Granted Patent US 9,390,920
Granted Patent B2
US 9,390,920 · App. 14/563,571 · Granted Jul 12, 2016

Composition including material, methods of depositing material, articles including same and systems for depositing material

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Quick Facts
Patent No.
US 9,390,920
App. No.
14/563,571
Granted
Jul 12, 2016
Kind
B2
Abstract

Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.

Claims (25)

1. A method for depositing a nanomaterial onto a substrate, the method comprising:

applying a composition comprising the nanomaterial comprising a plurality of semiconductor nanocrystals to an applicator surface;

positioning a mask including a predetermined pattern of apertures comprising a predetermined shape and size on the substrate; and

contacting the applicator surface to the substrate through the apertures to apply a pattern of the nanomaterial to the substrate, wherein the applicator including the composition is dried prior to contacting the substrate.

2. A method

in accordance with claim 1 wherein the composition comprising the nanomaterial comprising a plurality of semiconductor nanocrystals is applied to the applicator surface from a transfer surface.

3. A method for depositing a nanomaterial onto a substrate, the method comprising:

applying a composition comprising the nanomaterial comprising a population of semiconductor nanocrystals to an applicator surface;

positioning a mask including a predetermined pattern of apertures comprising a predetermined shape and size on the substrate; and

contacting the applicator surface to the substrate through the apertures to apply a pattern of the nanomaterial to the substrate, wherein the applicator including the composition is dried prior to contacting the substrate.

4. A method

in accordance with claim 3 wherein the composition comprising the nanomaterial comprising a population of semiconductor nanocrystals is applied to the applicator surface from a transfer surface.

5. A method in accordance with claim 1 wherein the steps are repeated to separately deposit each of one or more additional compositions comprising semiconductor nanocrystals onto the substrate through apertures in the mask.

6. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure.

7. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the core comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof.

8. A method in accordance with claim 1 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the shell comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof.

9. A method in accordance with claim 1 wherein the semiconductor nanocrystals include at least one ligand attached to the surface.

10. A method in accordance with claim 1 wherein the mask comprises a polyimide film, a fluorinated polyimide film, or a film including a fluorinated polyimide coating on at least one surface thereof.

11. A method in accordance with claim 3 wherein the applicator including the composition is dried prior to contacting the substrate.

12. A method in accordance with claim 3 wherein the steps are repeated to separately deposit each of one or more additional compositions comprising semiconductor nanocrystals onto the substrate through apertures in the mask.

13. A method in accordance claim 3 wherein the semiconductor nanocrystals comprise a core/shell structure.

14. A method in accordance with claim 3 wherein the semiconductor nanocrystals comprise a core/shell structure, wherein the core comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof.

15. A method in accordance with claim 3 the semiconductor nanocrystals comprise a core/shell structure, wherein the shell comprises a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, a Group II-IV-V compound, alloys thereof and/or mixtures thereof.

16. A method in accordance with claim 3 wherein the semiconductor nanocrystals include at least one ligand attached to the surface.

17. A method in accordance with claim 3 wherein the mask comprises a polyimide film, a fluorinated polyimide film, or a film including a fluorinated polyimide coating on at least one surface thereof.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2016
From: QD VISION, INC.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 041221/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2016
From: CAPRICORN-LIBRA INVESTMENT GROUP, LP
To: QD VISION, INC.
Reel/Frame 040766/0928 →
SECURITY INTEREST Recorded Aug 5, 2016
From: QD VISION, INC.
To: CAPRICORN-LIBRA INVESTMENT GROUP, LP
Reel/Frame 039595/0098 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2015
From: COE-SULLIVAN, SETH A.; ANC, MARIA J.; RITTER, JOHN E.; COX, MARSHALL; BREEN, CRAIG; KIM, LEEANN; BULOVIC, VLADIMIR; KYMISSIS, IOANNIS; PRAINO, ROBERT F., JR.; KAZLAS, PETER T.
To: QD VISION, INC.
Reel/Frame 035140/0820 →