LASER STOP LAYER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating.
1 . A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate;
forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions;
curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions;
adhering a metal foil to the alternating N-type and P-type semiconductor regions; and
laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions, wherein the non-conductive material regions act as a laser stop during the laser ablating.
2 . The method of claim 1 , wherein forming the paste between adjacent ones of the alternating N-type and P-type semiconductor regions comprises screen printing the paste.
3 . The method of claim 1 , wherein curing the paste to form the non-conductive material regions comprises heating the paste to a temperature of or less than approximately 450 degrees Celsius, or exposing to ultra-violet (UV) radiation, or both.
4 . The method of claim 1 , wherein curing the paste to form the non-conductive material regions comprises removing substantially all of an organic medium of the paste and retaining substantially all of a binder and an opacifying pigment of the paste.
5 . The method of claim 4 , wherein the binder is an inorganic binder, and wherein curing the paste to form the non-conductive material regions comprises converting the inorganic binder to a rigid inorganic matrix of the non-conductive material regions.
6 . The method of claim 1 , wherein laser ablating through the metal foil comprises using a laser having a wavelength, and wherein the paste and the resulting non-conductive material regions comprise an opacifying pigment for scattering or absorbing light of the wavelength.
7 . The method of claim 1 , further comprising:
prior to adhering the metal foil, forming a plurality of metal seed material regions to provide a metal seed material region on each of the alternating N-type and P-type semiconductor regions, wherein adhering the metal foil to the alternating N-type and P-type semiconductor regions comprises adhering the metal foil the plurality of metal seed material regions.
8 . The method of claim 7 , wherein adhering the metal foil to the plurality of metal seed material regions comprises using a technique selected from the group consisting of a laser welding process, a thermal compression process and an ultrasonic bonding process.
9 . The method of claim 1 , wherein adhering the metal foil to the alternating N-type and P-type semiconductor regions comprises adhering the metal foil directly to the exposed portions of the alternating N-type and P-type semiconductor regions and directly to the non-conductive material regions.
10 . The method of claim 9 , wherein the paste and the resulting non-conductive material regions comprise an adhesive, and wherein adhering the metal foil directly to the exposed portions of the alternating N-type and P-type semiconductor regions and directly to the non-conductive material regions comprises using a squeegee to fit up the metal foil with the exposed portions of the alternating N-type and P-type semiconductor regions and the non-conductive material regions.
11 . (canceled)
12 . A solar cell, comprising:
a substrate;
a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate;
a plurality of non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions, the plurality of non-conductive material regions comprising a binder and an opacifying pigment, wherein the opacifying pigment amounts to greater than approximately 50% of the total weight composition of the plurality of non-conductive material regions; and
a plurality of conductive contact structures electrically connected to the plurality of alternating N-type and P-type semiconductor regions, each conductive contact structure comprising a metal foil portion disposed above and in alignment with a corresponding one of the alternating N-type and P-type semiconductor regions.
13 . The solar cell of claim 12 , wherein the opacifying pigment is selected from the group consisting of titanium oxide (TiO 2 ), barium sulfate (BaSO 4 ), zinc sulfide (ZnS), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), carbon black, and carbon nanotubes.
14 . The solar cell of claim 12 , wherein the binder is an inorganic binder selected from the group consisting of a siloxane, a silsesquioxane, and a non-silicon alkoxide.
15 . The solar cell of claim 12 , wherein the binder is an organic binder selected from the group consisting of a polyimide and a cellulose.
16 . The solar cell of claim 12 , wherein each conductive contact structure further comprises a metal seed layer disposed directly between the corresponding one of the alternating N-type and P-type semiconductor regions and the metal foil portion.
17 . The solar cell of claim 12 , wherein the plurality of non-conductive material regions further comprise an adhesive, and wherein, for each conductive contact, the metal foil portion is disposed directly on the corresponding one of the alternating N-type and P-type semiconductor regions and directly on a portion of one of the plurality of non-conductive material regions.
18 . The solar cell of claim 17 , wherein the plurality of non-conductive material regions comprises a silicon alkoxide or an aluminum alkoxide, or both.
19 . The solar cell of claim 12 , wherein the plurality of non-conductive material regions increase a solar energy absorbance efficiency of the solar cell.
20 . A paste for forming a non-conductive region of a solar cell, the paste comprising:
a binder;
an opacifying pigment; and
an organic medium mixed with the binder and the opacifying pigment, wherein greater than approximately 25% of a total weight composition of the paste is the opacifying pigment, and wherein less than approximately 50% of the total weight composition of the paste is the organic medium.
21 . The paste of claim 20 , wherein the opacifying pigment is selected from the group consisting of titanium oxide (TiO 2 ), barium sulfate (BaSO 4 ), zinc sulfide (ZnS), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), carbon black, and carbon nanotubes.
22 .- 29 . (canceled)