Semiconductor device, related manufacturing method, and related electronic device
A semiconductor device may include the following elements: a first substrate; a second substrate; a dielectric layer, which may be positioned between the first substrate and the second substrate and may have a hole; a first conductive member, which may be positioned in the dielectric layer; a second conductive member, which may be positioned in the dielectric layer, may be spaced from the first conductive member, and may be positioned closer to the second substrate than the first conductive member; and a third conductive member, which may contact both the first conductive member and the second conductive member through the hole.
1. A semiconductor device comprising:
a first substrate;
a second substrate;
a dielectric layer that is positioned between the first substrate and the second substrate and has a hole;
a first conductive member that is positioned in the dielectric layer and includes a first conductive material portion and a first etch-stop layer formed on the first conductive material portion;
a second conductive member that is positioned in the dielectric layer and includes a second conductive material portion and a second etch-stop layer formed on the second conductive portion, wherein the second conductive member is spaced from the first conductive member, and is positioned closer to the second substrate than the first conductive member, and wherein the hole of the dielectric layer exposes a top and side portion of the first etch-stop layer and a lateral portion of the first conductive material portion of the first conductive member, and a top portion of the second etch-stop layer of the second conductive member; and
a third conductive member that contacts the top and side of the first etch-stop layer and the lateral portion of the first conductive material portion of the first conductive member and the top portion of the second etch-stop layer of the second conductive member through the hole.
2. The semiconductor device of claim 1 , wherein a first side of the third conductive member contacts the first conductive member, wherein a second side of the third conductive member contacts the second conductive member, and wherein a third side of the third conductive member is positioned inside the dielectric layer and is directed connected to each of the first side of the third conductive member and the second side of the third conductive member.
3. The semiconductor device of claim 2 , wherein a length of the third side of the third conductive member is less than a total length of the third conductive member in a direction perpendicular to the second substrate.
4. The semiconductor device of claim 2 , wherein the first side of the third conductive member contacts a first side of the first conductive member, and wherein the third side of the third conductive member contacts a second side of the first conductive member.
5. The semiconductor device of claim 1 , wherein the third conductive member includes a conductive material portion and a diffusion barrier, wherein the conductive material portion is formed of a first conductive material, wherein the diffusion barrier is formed of a second conductive material different from the first conductive material, and wherein the diffusion barrier is positioned between the conductive material portion and at least one of the first conductive member and the second conductive member.
6. The semiconductor device of claim 1 , wherein the conductive material portion is formed of a first conductive material, wherein the etch-stop layer is formed of a second conductive material different from the first conductive material, and wherein the etch-stop layer is positioned between the conductive material portion and the first substrate.
7. The semiconductor device of claim 6 , wherein the third conductive member contacts both the conductive material portion and the etch-stop layer.
8. The semiconductor device of claim 6 , wherein the etch-stop layer is positioned between the conductive material portion and a portion of the third conductive member.
9. The semiconductor device of claim 1 , wherein the conductive material portion is formed of a first conductive material, wherein the etch-stop layer is formed of a second conductive material different from the first conductive material, and wherein the etch-stop layer is positioned between the conductive material portion and the third conductive member.
10. The semiconductor device of claim 9 , wherein the third conductive member includes a metal portion and a diffusion barrier, and wherein the diffusion barrier is positioned between the metal portion and the etch-stop layer.
11. An electronic device comprising a semiconductor device, wherein the semiconductor device comprises:
a first substrate;
a second substrate;
a dielectric layer positioned between the first substrate and the second substrate and has a hole;
a first conductive member, which is positioned in the dielectric layer and includes a first conductive material portion and a first etch-stop layer formed on the first conductive material portion;
a second conductive member, which is positioned in the dielectric layer and includes a second conductive material portion and a second etch-stop layer formed on the second conductive portion, wherein the second conductive member is spaced from the first conductive member, and is positioned closer to the second substrate than the first conductive member, and wherein the hole of the dielectric layer exposes a top and side portion of the first etch-stop layer and a lateral portion of the first conductive material portion of the first conductive member, and a top portion of the second etch-stop layer of the second conductive member; and
a third conductive member that contacts the top and side of the first etch-stop layer and the lateral portion of the first conductive material portion of the first conductive member and the top portion of the second etch-stop layer of the second conductive member through the hole.