Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
View Patent ↗A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I′) between a value I of an absorbance of 3566 cm −1 and a value I′ of an absorbance of 3695 cm −1 , and a crystallite diameter XS, is 0.08 or less. A =( I/I ′)/ XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a′) and a lattice constant (a) measured by powder X-ray diffraction, is −0.16% or more. B (%)=(1− a/a ′)×100
1. A polishing agent comprising:
cerium oxide particles; and
water,
wherein, in said cerium oxide particle, a value A found by a formula below from a ratio (I/I′) between a value I of an absorbance of 3566 cm −1 and a value I′ of an absorbance of 3695 cm −1 , with an absorbance of 3900 cm −1 of an infrared absorption spectrum as a criterion, and a crystallite diameter XS measured by X-ray diffraction is 0.08 or less
A =( I/I ′)/ XS.
2. The polishing agent according to claim 1 ,
wherein the crystallite diameter XS of said cerium oxide particle is 20 nm or more to 60 nm or less.
3. The polishing agent according to claim 1 ,
wherein in said cerium oxide particle, a ratio (XS/D) between the crystallite diameter XS and an average primary particle diameter D obtained by a scanning electron microscope is 0.4 or more to 1.0 or less.
4. The polishing agent according to claim 3 ,
wherein the average primary particle diameter D of said cerium oxide particles is 30 nm or more to 100 nm or less.
5. A polishing agent comprising:
cerium oxide particles; and
water,
wherein, in said cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a′) and a lattice constant (a) measured by powder X-ray diffraction is −0.16% or more, and an average secondary particle diameter D′ of said cerium oxide particles is 90 nm or more to 500 nm or less
B (%)=(1 −a/a ′)×100.
6. The polishing agent according to claim 5 ,
wherein the average secondary particle diameter D′ of said cerium oxide particles is 95 nm or more to 250 nm or less.
7. The polishing agent according to claim 5 ,
wherein the average secondary particle diameter D′ of said cerium oxide particles is 95 nm or more to 200 nm or less.
8. A polishing method comprising polishing by a relative motion between a surface to be polished and a polishing pad which are brought into contact with each other while a polishing agent is supplied to the polishing pad,
wherein the polishing agent according to claim 1 is supplied to the polishing pad.
9. A polishing method comprising polishing by a relative motion between a surface to be polished and a polishing pad which are brought into contact with each other while a polishing agent is supplied to the polishing pad,
wherein the polishing agent according to claim 5 is supplied to the polishing pad.
10. A manufacturing method of a semiconductor integrated circuit device, comprising a step of polishing the surface to be polished by the polishing method according to claim 8 .
11. A manufacturing method of a semiconductor integrated circuit device, comprising a step of polishing the surface to be polished by the polishing method according to claim 9 .