C12A7 electride thin film fabrication method and C12A7 electride thin film
View Patent ↗A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 .
1. A C12A7 electride thin film fabrication method, comprising:
forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere including oxygen, hydrogen, and a sputtering gas using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 ,
wherein;
an oxygen partial pressure of the oxygen in the atmosphere is less than or equal to 0.0001 Pa, and a hydrogen partial pressure of the hydrogen in the atmosphere of less than 0.004 Pa; and
when t (m) denotes a distance between the substrate and the target, and d(m) denotes a diameter of a gas molecule of a sputtering gas, a sputtering gas pressure P (Pa) of the sputtering gas in the atmosphere is adjusted to satisfy:
8.9×10 −22 /( td 2 )< P< 4.5×10 −20 /( td 2 ).
2. The fabrication method as claimed in claim 1 , wherein a surface polishing process is performed on the target.
3. The fabrication method as claimed in claim 1 , wherein the vapor deposition corresponds to sputtering.
4. The fabrication method as claimed in claim 3 , wherein the sputtering is performed using at least one type of gas selected from a group consisting of He (helium), Ne (neon), N 2 (nitrogen), Ar (argon), NO (nitric oxide), Kr (krypton), and Xe (xenon).
5. The fabrication method as claimed in claim 1 , wherein a pre-sputtering process is performed on the target.
6. The fabrication method as claimed in claim 5 , wherein the pre-sputtering process is performed using at least one type of gas selected from a group consisting of He (helium), Ne (neon), N 2 (nitrogen), Ar (argon), and NO (nitric oxide).
7. The fabrication method as claimed in claim 1 , wherein the amorphous C12A7 electride thin film has a thickness less than or equal to 10 μm.
8. The fabrication method as claimed in claim 1 , wherein the substrate is used in a non-heated state.
9. The fabrication method as claimed in claim 1 , wherein the substrate corresponds to a glass substrate.
10. A fabrication method, comprising:
forming an amorphous thin film by vapor deposition under an atmosphere including oxygen, hydrogen, and a sputtering gas using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 ,
wherein;
an oxygen partial pressure of the oxygen in the atmosphere is less than or equal to 0.0001 Pa, and a hydrogen partial pressure of the hydrogen in the atmosphere of less than 0.004 Pa; and
when t (m) denotes a distance between the substrate and the target, and d(m) denotes a diameter of a gas molecule of a sputtering gas, a sputtering gas pressure P (Pa) of the sputtering gas in the atmosphere is adjusted to satisfy:
8.9×10 −22 /( td 2 )< P< 4.5×10 −20 /( td 2 ).
11. The fabrication method as claimed in claim 1 , wherein, when the sputtering gas comprises at least two gases, a sum of partial pressures of the at least two gases is adjusted to satisfy the sputtering gas pressure P.
12. The fabrication method as claimed in claim 10 , wherein, when the sputtering gas comprises at least two gases, a sum of partial pressures of the at least two gases is adjusted to satisfy the sputtering gas pressure P.