Power integrated devices, electronic devices including the same and electronic systems including the same
View Patent ↗A power integrated device includes a gate electrode on a substrate, a source region and a drain region disposed in the substrate at two opposite sides of the gate electrode, a drift region disposed in the substrate between the gate electrode and the drain region to be spaced apart from the source region, and a plurality of insulating stripes disposed in an upper region of the drift region to define at least one active stripe therebetween. Related electronic devices and related electronic systems are also provided.
1. A power integrated device comprising:
a gate electrode over a substrate;
a source region and a drain region disposed in the substrate at two opposite sides of the gate electrode;
a drift region disposed in the substrate between the gate electrode and the drain region to be spaced apart from the source region;
a plurality of insulating stripes disposed in an upper region of the drift region and defining at least one active stripe between the plurality of insulating stripes; and
a top region being disposed in the upper region of the drift region and adjacent to a sidewall of the drain region,
wherein the plurality of insulating stripes is disposed in an upper region of the top region.
2. The power integrated device of claim 1 ,
wherein the plurality of insulating stripes extend in parallel to each other; and
wherein the at least one active stripe is in parallel to the drain region.
3. The power integrated device of claim 1 , wherein the at least one active stripe extends in parallel to the drain region, and
wherein the plurality of insulating stripes extend in parallel to the drain region.
4. The power integrated device of claim 1 , wherein the at least one active stripe extends in parallel to the gate electrode, and
wherein the plurality of insulating stripes extend in parallel to the gate electrode.
5. The power integrated device of claim 1 , wherein the plurality of insulating stripes are in parallel to each other.
6. The power integrated device of claim 1 ,
wherein the plurality of insulating stripes extend in parallel to each other, and
wherein the at least one active stripe is in parallel to the gate electrode.
7. The power integrated device of claim 1 , wherein the plurality of insulating stripes include trench isolation layers which are spaced apart from each other.
8. The power integrated device of claim 1 ,
wherein the drift region includes a second drift region of a first conductivity; and
wherein the drain region is disposed in an upper region of the second drift region, has the first conductivity, and has an impurity concentration higher than an impurity concentration of the second drift region.
9. The power integrated device of claim 8 , wherein the drift region further includes a first drift region of a first conductivity, and
wherein the first drift region surrounds the second drift region.
10. The power integrated device of claim 8 ,
wherein the top region has a second conductivity which is opposite to the first conductivity.
11. The power integrated device of claim 10 ,
wherein the top region is formed shallower than the second drift region, and
wherein the top region laterally extends into the substrate adjacent to the gate electrode.
12. The power integrated device of claim 10 , wherein the second drift region surrounds all of sidewalls and a bottom surface of the top region.
13. The power integrated device of claim 10 , wherein the plurality of insulating stripes includes trench isolation layers which are shallower than the top region.
14. The power integrated device of claim 10 , wherein the first conductivity is N-type conductivity and the second conductivity is P-type conductivity.
15. The power integrated device of claim 10 , wherein the first conductivity is P-type conductivity and the second conductivity is N-type conductivity.
16. The power integrated device of claim 1 , further comprising a body region surrounding the source region,
wherein the body region has a conductivity that is opposite to the source region.
17. The power integrated device of claim 16 , wherein an upper region of the body region, between the source region and the drift region, serves as a channel region.
18. A power integrated device comprising:
a drift region of a first conductivity and a body region of a second conductivity, which are disposed in a substrate of the second conductivity;
a source region of the first conductivity disposed in an upper region of the body region;
a gate electrode disposed over the body region between the source region and the drift region;
a drain region of the first conductivity disposed in an upper region of the drift region and spaced apart from the gate electrode;
a plurality of insulating stripes disposed in the upper region of the drift region and defining at least one active stripe between the plurality of insulating stripes; and
a top region being disposed in the upper region of the drift region and adjacent to a sidewall of the drain region,
wherein the plurality of insulating stripes is disposed in an upper region of the top region, and
wherein the at least one active stripe is in parallel to the drain region.
19. A power integrated device comprising:
a drift region of a first conductivity and a body region of a second conductivity, which are disposed in a substrate of the second conductivity type;
a top region of the second conductivity disposed in an upper region of the drift region;
a source region of the first conductivity disposed in an upper region of the body region;
a gate electrode disposed over the body region between the source region and the drift region, a drain region of the first conductivity disposed in an upper region of the drift region and spaced apart from the gate electrode; and
a plurality of insulating stripes disposed in an upper region of the top region and defining at least one active stripe between plurality of insulating stripes,
wherein the at least one active stripe is in parallel to the drain region.