Pattern forming method

1. A pattern forming method for forming a pattern using a near-field exposure mask manufactured by a manufacturing method,

the manufacturing method of the near-field exposure mask comprising:

forming a resist layer on a first substrate; forming a resist pattern on the first substrate by using a lithography, the resist pattern having lines and spaces; depositing a near-field light generating film on the resist pattern to fill the near-field light generating film in the spaces of the resist pattern; polishing the near-field light generating film to expose an upper surface of the resist pattern and forming a near-field light generating film pattern, the near-filed light generating film pattern having lines and spaces; and removing remaining parts of the resist pattern on the first substrate,

the pattern forming method comprising:

applying a light-curable resin on a second substrate;

pressing the near-field exposure mask against the light-curable resin;

injecting light to a side of the second substrate;

causing the light-curable resin to react to near-field light generated from the near-field light generating film pattern to generate first portions of the light-curable resin in which the near-field light is generated and second portions of the light-curable resin in which no near-field light is generated, the near-field light being generated by the injected light;

detaching the near-field exposure mask from the second substrate;

removing the first portions of the light-curable resin and remaining the second portions of the light-curable resin on the second substrate; and

etching the second substrate using the second portions of the light-curable resin.

2. The pattern forming method according to claim 1 , wherein the manufacturing method further comprises:

depositing a resin on the near-field light generating film pattern to fill the resin in the space of the near-field light generating film pattern; and

polishing the resin to expose an upper face of the near-field light generating film pattern.

3. The pattern forming method according to claim 2 , wherein the resin is a thermosetting resin or a light-curable resin.

4. The pattern forming method according to claim 1 , wherein the near-field light generating film is a film containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

5. The pattern forming method according to claim 1 , wherein a height of at least one of the convexities in the near-field light generating pattern is 50 nm or less.

6. The pattern forming method according to claim 1 , wherein the near-field light generating film is a film containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

7. A pattern forming method for forming a pattern using a near-field exposure mask manufactured by a manufacturing method,

the manufacturing method of the near-field exposure mask comprising:

forming a resist layer on a first substrate; forming a resist pattern on the first substrate by using a lithography, the resist pattern having lines and spaces; etching the substrate using the resist pattern as a mask to form concavities and convexities in the substrate; removing the resist pattern on the first substrate; and depositing a near-field light generating film on at least a top surface of the convexities in the first substrate,

the pattern forming method comprising:

applying a light-curable resin on a second substrate;

pressing the near-field exposure mask against the light-curable resin;

injecting light to a side of the second substrate;

causing the light-curable resin to react to near-field light generated from the near-field light generating film pattern to generate first portions of the light-curable resin in which the near-field light is generated and second portions of the light-curable resin in which no near-field light is generated, the near-field light being generated by the injected light;

detaching the near-field exposure mask from the second substrate;

removing the first portions of the light-curable resin and remaining the second portions of the light-curable resin on the second substrate; and

etching the second substrate using the second portions of the light-curable resin.

8. The pattern forming method according to claim 7 , wherein the near-field light generating film is also deposited on parts of sides connecting to the top surface of the convexities in the first substrate.

9. The pattern forming method according to claim 8 , wherein the depositing of the near-field light generating film comprises:

setting a first direction of an irradiation source of the near-field light generating film to be diagonal relative to a direction perpendicular to a plane of the first substrate and a direction that the convexities are arranged; and

depositing the near-field light generating film from the first direction;

setting a second direction of the irradiation source of the near-field light generating film to be diagonal relative to the direction perpendicular to the plane of the first substrate and the direction that the convexities are arranged, the second direction crossing with the first direction; and

depositing the near-field light generating film from the second direction.

10. The pattern forming method according to claim 8 , wherein the manufacturing method further comprises:

depositing a resin on the near-field light generating film and the substrate to fill the resin in the concavities of the substrate; and

polishing the resin to expose an upper face of the convexities of the substrate.

11. The pattern forming method according to claim 10 , wherein the resin is a thermosetting resin or a light-curable resin.

12. The pattern forming method according to claim 7 , wherein the near-field light generating film is also deposited on sides of the convexities in the first substrate.

13. The pattern forming method according to claim 12 , wherein the depositing of the near-field light generating film comprises:

setting a first direction of an irradiation source of the near-field light generating film to be diagonal relative to a direction perpendicular to a plane of the first substrate and a direction that the convexities are arranged; and

depositing the near-field light generating film from the first direction;

setting a second direction of the irradiation source of the near-field light generating film to be diagonal relative to the direction perpendicular to the plane of the first substrate and the direction that the convexities are arranged, the second direction crossing with the first direction; and

depositing the near-field light generating film from the second direction.

14. The pattern forming method according to claim 12 , wherein the manufacturing method further comprises:

depositing a resin on the near-field light generating film and the substrate to fill the resin in the concavities of the substrate; and

polishing the resin to expose an upper face of the convexities of the substrate.

15. The pattern forming method according to claim 14 , wherein the resin is a thermosetting resin or a light-curable resin.

16. The pattern forming method according to claim 7 , wherein the near-field light generating film is also deposited on bottom surfaces of the concavities in the substrate.

17. The pattern forming method according to claim 7 , wherein the near-field light generating film is also deposited on sides of the convexities and bottom surfaces in the substrate.

18. The pattern forming method according to claim 17 , wherein the depositing of the near-field light generating film comprises:

setting a first direction of an irradiation source of the near-field light generating film to be diagonal relative to a direction perpendicular to a plane of the substrate and a direction that the convexities are arranged; and

depositing the near-field light generating film from the first direction;

setting a second direction of the irradiation source of the near-field light generating film to be diagonal relative to the direction perpendicular to the plane of the substrate and the direction that the convexities are arranged, the second direction crossing with the first direction; and

depositing the near-field light generating film from the second direction.