Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
View Patent ↗A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.
1. A semiconductor manufacturing apparatus comprising:
a chamber capable of accommodating therein a plurality of semiconductor substrates;
a gas supply part periodically supplying a plurality of kinds of process gas to the chamber;
a top exhaust port connected to a top portion of the chamber, and which exhausts gas within the chamber;
a bottom exhaust port connected to a bottom portion of the chamber, and which exhausts gas within the chamber;
a controller controlling a timing of supplying the plurality of kinds of process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port;
a first exhaust pipe connected to the top exhaust port;
a second exhaust pipe connected to the bottom exhaust port;
a common exhaust pipe connected to the first and second exhaust pipes; and
a common exhaust pump connected to the common exhaust pipe;
a top switching valve provided in the first exhaust pipe and connects or disconnects between the top exhaust port and the common exhaust pipe, and
a bottom switching valve provided in the second exhaust pipe and connects or disconnects between the bottom exhaust port and the common exhaust pipe, wherein
the controller switches one time between exhausting from the top exhaust port and exhausting from the bottom exhaust port during at least one cycle of supplying the plurality of kinds of process gas from the gas supply part being performed,
when the top switching valve connects between the top exhaust port and the common exhaust pipe, the bottom switching valve disconnects between the bottom exhaust port and the common exhaust pipe,
when the top switching valve disconnects between the top exhaust port and the common exhaust pipe, the bottom switching valve connects between the bottom exhaust port and the common exhaust pipe,
the controller switches between exhaust from the top exhaust port and exhaust from the bottom exhaust port in a timing of supplying process gas from the gas supply part is performed for N times (N is an integer equal to or larger than 1),
the bottom exhaust port is provided at a position higher than a lowest semiconductor substrate in the chamber, and
the exhausting time of the top exhaust port in one or more cycles is substantially equal to the exhausting time of the bottom exhaust port in one or more cycles.
2. The apparatus of claim 1 , further comprising:
a first exhaust pump connected to the first exhaust pipe; and
a second exhaust pump connected to the second exhaust pipe.
3. The apparatus of claim 2 , further comprising:
a first switching valve provided in the first exhaust pipe and connects or disconnects between the top exhaust port and the first exhaust pump; and
a second switching valve provided in the second exhaust pipe and connects or disconnects between the bottom exhaust port and the second exhaust pump.
4. The apparatus of claim 3 , wherein
when the first switching valve connects between the top exhaust port and the first exhaust pump, the second switching valve disconnects between the bottom exhaust port and the second exhaust pump, and
when the first switching valve disconnects between the top exhaust port and the first exhaust pump, the second switching valve connects between the bottom exhaust port and the second exhaust pump.
5. A semiconductor manufacturing apparatus comprising:
a chamber capable of accommodating therein a plurality of semiconductor substrates;
a gas supply part periodically supplying a plurality of kinds of process gas to the chamber;
a top exhaust port connected to a top portion of the chamber, and which exhausts gas within the chamber;
a bottom exhaust port connected to a bottom portion of the chamber, and which exhausts gas within the chamber;
a controller controlling a timing of supplying the plurality of kinds of process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port;
a first exhaust pipe connected to the top exhaust port;
a second exhaust pipe connected to the bottom exhaust port;
a common exhaust pipe connected to the first and second exhaust pipes; and
a common exhaust pump connected to the common exhaust pipe, wherein
the controller switches one time between exhausting from the top exhaust port and exhausting from the bottom exhaust port during at least one cycle of supplying the plurality of kinds of process gas from the gas supply part being performed,
a shared switching valve provided between the first exhaust pipe and the common exhaust pipe and between the second exhaust pipe and the common exhaust pipe,
the shared switching valve switches between a first state where the first exhaust pipe is connected to the common exhaust pipe and a second state where the second exhaust pipe is connected to the common exhaust pipe,
the shared switching valve switches alternately between the first state and the second state.