Multiple wafer single bath etcher
An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
1. An etcher, comprising:
a bath with a first electrode at a first end and a second electrode at a second end;
a plurality of blades configured to fit in the bath, wherein at least one blade of the plurality of blades holds a wafer;
a sparger, wherein the sparger includes holes to enable liquid to move near an etch side of the wafer, wherein the holes are situated circumferentially at a shallow angle to the etch side of the wafer; and
at least one tunnel, wherein the at least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
2. An etcher of claim 1 , further comprising a lid that covers the bath.
3. An etcher of claim 1 , wherein the at least one blade holds the wafer using a vacuum clamp at a backside outer edge of the wafer.
4. An etcher of claim 3 , wherein the vacuum clamp comprises a vacuum space between two concentric seals and the backside outer edge of the wafer.
5. An etcher of claim 1 , wherein the first at least one blade has a seal at an outer edge.
6. An etcher of claim 1 , wherein the first at least one blade has one or more robot grasping features.
7. An etcher of claim 6 , wherein a grasping feature of the one or more robot grasping feature comprises one or more of the following: a hole, a ledge, a peg, a lip, or a slot.
8. An etcher of claim 1 , wherein the tunnel includes one or more top slots.
9. An etcher of claim 1 , wherein the tunnel is attached to a holder.
10. An etcher of claim 1 , wherein the sparger is attached to the tunnel.
11. An etcher of claim 1 , further comprising a temperature controller.
12. An etcher of claim 1 , wherein the first electrode comprises a wire mesh.
13. An etcher of claim 12 , wherein the wire mesh comprises a platinum mesh with a 1 to 10 mm grid spacing.
14. An etcher of claim 13 , wherein the minimum wire density is achieved using a wire size of 0.25 to 2 mm diameter with a 1 to 10 mm grid spacing.
15. A method for etching, comprising:
providing a bath with a first electrode at a first end and a second electrode at a second end;
providing a plurality of blades configured to fit the bath, wherein a first blade of the plurality of blades holds a wafer;
providing a sparger, wherein the sparger includes holes to enable liquid to move near an etch side of the wafer, wherein the holes are situated circumferentially at a shallow angle to the etch side of the wafer;
providing a tunnel, wherein the tunnel is configured to fit between the first blade of the plurality of blades and a second blade of the plurality of blades in the bath; and
etching the wafer.
16. A method of claim 15 , wherein the at least one blade holds the wafer using a vacuum clamp at a backside outer edge of the wafer.
17. A method of claim 16 , wherein the vacuum clamp comprises a vacuum space between two concentric seals and the backside outer edge of the wafer.