SINGLE PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and passivating dielectric insulating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.
1 . A back contact back junction photovoltaic solar cell comprising:
a semiconductor light absorbing layer having a front side and a backside;
base regions and emitter regions on said semiconductor light absorbing layer backside;
a passivating dielectric insulating layer on said base regions;
a first level base and emitter metallization, said first level metallization contacting said emitter regions and contacting said passivating dielectric insulating layer on said base regions, said first level metallization and said passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer;
an electrically insulating backplane on said first level metallization;
a second level metallization contacting said first level metallization through conductive vias in said electrically insulating dielectric.
2 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said passivating dielectric insulating layer is aluminum oxide Al2O3.
3 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said passivating dielectric insulating layer is boron doped aluminum oxide Al2O3.
4 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said passivating dielectric insulating layer is hafnium oxide HfOx.
5 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said first level metallization is aluminum.
6 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said first level metallization is titanium.
7 . The back contact back junction photovoltaic solar cell of claim 1 , wherein said semiconductor light absorbing layer is n doped.