Semiconductor device including memory cell array and power supply region
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.
1. A semiconductor device, comprising:
a memory cell array, including:
a first memory cell including a first separator area between a first gate electrode and a second gate electrode, a part of a P-well, and a part of a first N-well arranged in a side of the P-well in a first direction,
a second memory cell including another part of the P-well and a part of a second N-well arranged in another side of the P-well in the first direction, and arranged next to the first memory cell in the first direction, and
a third gate electrode on the P-well straddling a border between the first and second memory cells; and
a power supply region, arranged next to the first and second memory cells in a second direction perpendicular to the first direction, including:
a fourth gate electrode on the P-well,
a fifth gate electrode on the first N-well,
a sixth gate electrode on the second N-well,
a second separator area between the fourth and sixth gate electrodes, and between the P-well and the second N-well, and
a third separator area between the fourth and fifth gate electrodes, and between the P-well and the first N-well,
wherein, in the second direction, a distance between the first and fourth gate electrodes is longer than a distance between the third and fourth gate electrodes.
2. The semiconductor device according to claim 1 , further comprising:
a seventh gate electrode in the first memory cell; and
a fourth separator area in the first memory cell between the third and seventh gate electrodes.
3. The semiconductor device according to claim 1 , further comprising:
a third memory cell; and
a fourth memory cell arranged next to the third memory cell in the first direction,
wherein, in the second direction, the power supply region is arranged between the first and third memory cells and between the second and fourth memory cells.