Organic bottom antireflective coating composition for nanolithography
An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.
1. A method of forming a photolithographic pattern, comprising:
(a) providing an antireflective composition obtained by steps comprising admixing materials comprising:
1) a polymer comprising:
(i) (a-1) at least one unit derived from a compound having an aromatic group and constituting the main chain of the polymer; and
(ii) (a-2) a unit derived from an amine crosslinker and attached to the main chain,
2) a crosslinker not attached to the polymer, wherein the content of the crosslinker not attached to the polymer is from 0.001 wt % to 5 wt % based on the total weight of solid content in the anti-reflective composition, and
3) a solvent;
(b) applying a coating layer of the anti-reflective composition on a substrate;
(c) applying a layer of a photoresist composition over the anti-reflective composition layer;
(d) exposing the photoresist composition layer to actinic radiation; and
(e) developing the photoresist composition layer to form a photoresist pattern.
2. The method of claim 1 wherein the unit (a-2) is derived from a glycoluril crosslinker.
3. The method of claim 1 wherein the aromatic group comprises a phenyl group, naphthyl group or anthracenyl group.
4. The method of claim 1 wherein the polymer further comprises at least one unit derived from a compound having no aromatic group and constituting the main chain.
5. The method of claim 1 wherein the anti-reflective composition further comprises an acid.
6. The method of claim 5 wherein the anti-reflective composition further comprises an acid generator.
7. The method of claim 1 wherein the anti-reflective composition further comprises an acid generator.
8. The method of claim 1 wherein the content of the crosslinker not attached to the main chain of the polymer is less than or equal to 3 wt % based on the total weight of solid content in the composition.
9. A method of forming a photolithographic pattern, comprising:
(a) preparing an antireflective composition by one or more steps comprising:
(i) admixing distinct materials comprising:
1) a polymer comprising (a-1) at least one unit derived from a compound having an aromatic group and constituting the main chain of the polymer, and
(a-2) a unit derived from an amine crosslinker and attached to the main chain,
2) a crosslinker not attached to the polymer, wherein the content of the crosslinker not attached to the polymer is from 0.001 wt % to 5 wt % based on the total weight of solid content in the anti-reflective composition, and
3) a solvent;
(b) applying a coating layer of the anti-reflective composition on a substrate;
(c) applying a layer of a photoresist composition over the anti-reflective composition layer;
(d) exposing the photoresist composition layer to actinic radiation; and
(e) developing the photoresist composition layer to form a photoresist pattern.
10. The method of claim 9 wherein the content of the crosslinker not attached to the main chain of the polymer is less than or equal to 3 wt % based on the total weight of solid content in the composition.