IP Library Granted Patent US 9,880,229
Granted Patent B2
US 9,880,229 · App. 14/585,479 · Granted Jan 30, 2018

Measurement of bonding resistances

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Quick Facts
Patent No.
US 9,880,229
App. No.
14/585,479
Granted
Jan 30, 2018
Kind
B2
Abstract

Disclosed is a method for determining a contact resistance of an H bridge including four transistors, each transistor having a point of connection to two neighboring transistors, a bond being produced in each case between a connection point lying between two transistors and an access terminal. The method includes: acting on the open/closed state of the transistors of the bridge so that the transistors on either side of the connection point corresponding to the access terminal are open; applying a determined voltage to an access terminal; determining the current flowing through the bond corresponding to the access terminal; grounding an access terminal neighboring the access terminal if this neighboring access terminal is not already connected to ground; and measuring the voltage at the other neighboring access terminal.

Claims (9)

1. A method for determining an internal contact resistance of an H bridge comprising four transistors arranged in an H, each transistor having a point of connection to two neighboring transistors, a bond being produced in each case between a connection point lying between two transistors and an access terminal, the method comprising:

acting on the open/closed state of the transistors of the H bridge so that the transistors on either side of the connection point corresponding to the access terminal are open;

applying a determined voltage to the access terminal;

determining the current flowing through the bond corresponding to said access terminal;

grounding an access terminal neighboring said access terminal when the neighboring access terminal is not already connected to ground; and

measuring the voltage at the other neighboring access terminal.

2. The method as claimed in claim 1 , wherein the voltage applied to the access terminal is less than the control voltage of each of the transistors.

3. The method as claimed in claim 1 , wherein the voltage applied to the access terminal is between 0.5 V and 5 V.

4. The method as claimed in claim 2 , wherein the voltage applied to the access terminal is between 0.5 V and 5 V.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2023
From: CONTINENTAL AUTOMOTIVE GMBH; VITESCO TECHNOLOGIES GMBH
To: VITESCO TECHNOLOGIES GMBH
Reel/Frame 063425/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2023
From: CONTINENTAL AUTOMOTIVE FRANCE S.A.S.; CONTINENTAL AUTOMOTIVE GMBH
To: VITESCO TECHNOLOGIES GMBH; CONTINENTAL AUTOMOTIVE GMBH
Reel/Frame 062492/0737 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 12, 2015
From: PASQUALETTO, ANGELO; QUINTIN, JEAN-MARIE
To: CONTINENTAL AUTOMOTIVE FRANCE; CONTINENTAL AUTOMOTIVE GMBH
Reel/Frame 034944/0632 →