SHINGLED SOLAR CELL MODULE

1 . An apparatus comprising:

a semiconductor wafer having a first surface including a first metallization pattern along a first outside edge, and a second metallization pattern along a second outside edge opposite to the first outside edge, the semiconductor wafer further comprising a first scribe line between the first metallization pattern and the second metallization pattern.

2 . An apparatus as in claim 1 wherein the first metallization pattern comprises a discrete contact pad.

3 . An apparatus as in claim 1 wherein the first metallization pattern comprises a first finger pointing away from the first outside edge toward the second metallization pattern.

4 . An apparatus as in claim 3 wherein the first metallization pattern further comprises a bus bar running along the first outside edge and intersecting the first finger.

5 . An apparatus as in claim 4 wherein the second metallization pattern comprises:

a second finger pointing away from the second outside edge toward the first metallization pattern; and

a second bus bar running along the second outside edge and intersecting the second finger.

6 . An apparatus as in claim 3 further comprising an electrically conductive adhesive running along the first outside edge and in contact with the first finger.

7 . An apparatus as in claim 3 wherein the first metallization pattern further comprises a first bypass conductor.

8 . An apparatus as in claim 3 wherein the first metallization pattern further comprises a first end conductor.

9 . An apparatus as in claim 1 wherein the first metallization pattern comprises silver.

10 . An apparatus as in claim 9 wherein the first metallization pattern comprises silver paste.

11 . An apparatus as in claim 9 wherein the first metallization pattern comprises discrete contacts.

12 . An apparatus as in claim 1 wherein the first metallization pattern comprises tin, aluminum, or another conductor less expensive than silver.

13 . An apparatus as in claim 1 wherein the first metallization pattern comprises copper.

14 . An apparatus as in claim 13 wherein the first metallization pattern comprises electroplated copper.

15 . An apparatus as in claim 13 further comprising a passivation scheme to reduce recombination.

16 . An apparatus as in claim 1 further comprising:

a third metallization pattern on the first surface of the semiconductor wafer not proximate to the first outside edge or to the second outside edge; and

a second scribe line between the third metallization pattern and the second metallization pattern, wherein the first scribe line is between the first metallization pattern and the third metallization pattern.

17 . An apparatus as in claim 16 wherein a ratio comprising:

a first width defined between first scribe line and the second scribe line/a length of the semiconductor wafer,

is between about 1:2 to about 1:20.

18 . An apparatus as in claim 17 wherein the length is about 156 mm or about 125 mm.

19 . An apparatus as in claim 17 wherein the semiconductor wafer includes chamfered corners.

20 . An apparatus as in claim 19 wherein:

the first scribe line defines with the first outside edge, a first rectangular region comprising two chamfered corners and the first metallization pattern, the first rectangular region having an area corresponding to a product of the length and a second width greater than the first width, minus a combined area of the two chamfered corners; and

the second scribe line defines with the first scribe line, a second rectangular region not including chamfered corners and including the third metallization pattern, the second rectangular region having the area corresponding to a product of the length and the first width.

21 . An apparatus as in claim 16 wherein the third metallization pattern comprises a finger pointing toward the second metallization pattern.

22 . An apparatus as in claim 1 further comprising a third metallization pattern on a second surface of the semiconductor wafer opposite to the first surface.

23 . An apparatus as in claim 22 wherein the third metallization pattern comprises a contact pad proximate to a location of the first scribe line.

24 . An apparatus as in claim 1 wherein the first scribe line is formed by a laser.

25 . An apparatus as in claim 1 wherein the first scribe line is in the first surface.

26 . An apparatus as in claim 1 wherein first metallization pattern comprises a feature configured to confine spreading of an electrically conducting adhesive.

27 . An apparatus as in claim 26 wherein the feature comprises a raised feature.

28 . An apparatus as in claim 27 wherein the first metallization pattern comprises a contact pad, and the feature comprises a dam abutting and taller than the contact pad.

29 . An apparatus as in claim 26 wherein the feature comprises a recessed feature.

30 . An apparatus as in claim 29 wherein the recessed feature comprises a moat.

31 . An apparatus as in claim 26 further comprising the electrically conducting adhesive in contact with the first metallization pattern.

32 . An apparatus as in claim 31 wherein the electrically conducting adhesive is printed.

33 . An apparatus as in claim 1 wherein the semiconductor wafer comprises silicon.

34 . An apparatus as in claim 33 wherein the semiconductor wafer comprises crystalline silicon.

35 . An apparatus as in claim 33 wherein the first surface is of n-type conductivity.

36 . An apparatus as in claim 33 wherein the first surface is of p-type conductivity.

37 . An apparatus as in claim 1 wherein:

the first metallization pattern is 5 mm or less from the first outside edge; and

the second metallization pattern is 5 mm or less from the second outside edge.

38 . An apparatus as in claim 1 wherein the semiconductor wafer includes chamfered corners, and the first metallization pattern comprises a tapered portion extending around a chamfered corner.

39 . An apparatus as in claim 38 wherein the tapered portion comprises a bus bar.

40 . An apparatus as in claim 38 wherein the tapered portion comprises a conductor connecting a discrete contact pad.