Vertical topology light-emitting device
View Patent ↗A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
1. A light emitting device, comprising:
a metal support structure comprising Cu;
an adhesion structure on the metal support structure;
a first metal layer on the adhesion structure;
a second metal layer comprising Ti on the first metal layer;
a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
an interface layer on the GaN-based semiconductor structure; and
a contact pad on the interface layer,
wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and
wherein a thickness of the metal support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.
2. The device according to claim 1 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.
3. The device according to claim 2 , wherein the first adhesion layer is thicker than the second adhesion layer.
4. The device according to claim 1 , wherein the first metal layer is thicker than the second metal layer.
5. The device according to claim 1 , wherein the interface layer comprises Ti.
6. The device according to claim 1 , wherein the interface layer comprises a first interface layer and a second interface layer.
7. The device according to claim 1 , wherein the contact pad comprises Au.
8. The device according to claim 1 , wherein the contact pad has a diameter of 100 microns.
9. A light emitting device, comprising:
a metal support structure;
an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
a first metal layer on the adhesion structure;
a second metal layer comprising Ti on the first metal layer;
a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
an interface layer on the GaN-based semiconductor structure; and
a contact pad on the interface layer,
wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and
wherein a thickness of the metal support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.
10. The device according to claim 9 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.
11. The device according to claim 10 , wherein the first adhesion layer is thicker than the second adhesion layer.
12. The device according to claim 9 , wherein the first metal layer is thicker than the second metal layer.
13. The device according to claim 9 , wherein the interface layer comprises Ti.
14. The device according to claim 9 , wherein the interface layer comprises a first interface layer and a second interface layer.
15. A light emitting device, comprising:
a support structure;
an adhesion structure comprising Au on the support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
a first metal layer on the adhesion structure;
a second metal layer on the first metal layer;
a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
an interface layer on the GaN-based semiconductor structure; and
a contact pad on the interface layer,
wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and
wherein a thickness of the support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.
16. The device according to claim 15 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.
17. The device according to claim 16 , wherein the first adhesion layer is thicker than the second adhesion layer.
18. The device according to claim 15 , wherein the first metal layer is thicker than the second metal layer.
19. The device according to claim 15 , wherein the interface layer comprises Ti.
20. The device according to claim 15 , wherein the interface layer comprises a first interface layer and a second interface layer.