IP Library Granted Patent US 9,990,940
Granted Patent B1
US 9,990,940 · App. 14/586,727 · Granted Jun 5, 2018

Seed structure for perpendicular magnetic recording media

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,990,940
App. No.
14/586,727
Granted
Jun 5, 2018
Kind
B1
Abstract

A data storage medium having a seed structure formed of a first seed layer comprising a nickel alloy NiY, where Y is an element selected from Al, B, Fe, Nb, W, and Co, and a second seed layer represented by NiWAX, where A is an element selected from Al, B, Fe, Nb, and Co, and X is either B, Si, Ti, Nb, V, Cr, Ru, or an oxide, with the second seed layer being disposed on the first seed layer; and a magnetic recording layer above the seed structure. In addition, a method for manufacturing a data storage medium containing the aforementioned seed structure is also disclosed.

Claims (50)

1. A data storage medium comprising:

a seed structure above a substrate, the seed structure being formed of a first seed layer comprising a nickel alloy NiA, and a second seed layer comprising a nickel alloy Ni 1−(m+n) A m X n , where A is one or more elements selected from the group consisting of Al, B, Fe, Nb, W, and Co, and X is an oxide, where m is a value between 0.10-0.50 and n is a value between 0.01-0.10, and wherein the second seed layer is disposed on top of the first seed layer; and

a magnetic recording layer above the seed structure.

2. The data storage medium of claim 1 wherein the nickel alloy of the first seed layer is further represented by Ni 1-p A p where p is between 0.10-0.50.

3. The data storage medium of claim 1 wherein the first seed layer has a saturation induction greater than 5 kG.

4. The data storage medium of claim 1 wherein the oxide of the second seed layer is selected from at least one oxide from the group consisting of TiO2, SiO2, CrO2, Cr2O3, Al2O3, ZrO2, Ta2O5, Nb2O5, V2O5, MgO, Mg2B2O5, MnO, WO3, HfO2, and B2O3.

5. The data storage medium of claim 1 further comprising an intermediate layer on top of the seed structure, wherein the intermediate layer includes multiple layers of ruthenium or ruthenium alloys, and wherein one of the ruthenium-containing layers is a high pressure ruthenium layer having a thickness between about 3 nm to about 12 nm.

6. The data storage medium of claim 1 wherein the seed structure has a thickness between about 3 nm to about 13 nm.

7. A data storage medium comprising:

a soft magnetic underlayer (SUL) formed over a substrate;

a seed structure above the SUL, the seed structure being formed of a first seed layer comprising a nickel alloy NiY, where Y is an element selected from the group consisting of Al, B, Fe, Nb, W, and Co, and a second seed layer comprising a nickel alloy NiWAX, where A is an element selected from the group consisting of Al, B, Fe, Nb, and Co, and X is either B, Si, Ti, Nb, V, Cr, Ru, or an oxide, and

wherein the second seed layer is disposed on top of the first seed layer, and contains one or more oxides selected from the group consisting of TiO2, SiO 2 , CrO2, Cr2O3, Al2O3, ZrO2, Ta2O5, Nb2O5, V2O5, MgO, Mg2B2O5, MnO, WO3, HfO2, and B2O3; and

a magnetic recording layer above the seed structure.

8. The data storage medium of claim 7 wherein the first seed layer is further represented by Ni 1-q Y q the value of q is between 0.10-0.50.

9. The data storage medium of claim 7 wherein the first seed layer has a saturation induction greater than 5 kG.

10. The data storage medium of claim 7 wherein the second seed layer is further represented by Ni 1−(l+h+k) W l A h X k , where l is a value between 0.01-0.10, h is a value between 0.10-0.40, and k is a value between 0.01-0.10.

11. The data storage medium of claim 7 further comprising an intermediate layer on the seed structure, wherein the intermediate layer includes multiple layers of ruthenium or ruthenium alloys, and wherein one of the ruthenium layers is a high pressure ruthenium layer having a thickness between about 3 nm to about 12 nm.

12. The data storage medium of claim 7 wherein the seed structure has a thickness between about 3 nm to about 13 nm.

13. An apparatus comprising:

a transducer head having a magnetoresistive read element; and

the data storage medium of claim 7 coupled to the transducer head.

14. A method of manufacturing a data storage medium comprising;

forming a soft under layer (SUL) above a substrate;

forming a seed structure above the SUL, the seed structure being formed of a first seed layer comprising a nickel alloy Ni 1-q Y q , where Y is an element selected from the group consisting of Al, B, Fe, Nb, W, and Co, and a second seed layer comprising a nickel alloy Ni 1−(l+h+k) W l A h X k , where A is an element selected from the group consisting of Al, B, Fe, Nb, and Co and X is either B, Si, Ti, Nb, V, Cr, Ru, or an oxide,

wherein the second seed layer is disposed on top of the first seed layer, and contains one or more oxides selected from the group consisting of TiO2, SiO2, CrO2, Cr2O3, Al2O3, ZrO2, Ta2O5, Nb2O5, V2O5, MgO, Mg2B2O5, MnO, WO3, HfO2, and B2O3; and

forming a magnetic recording layer above the seed structure.

15. The method of claim 14 wherein the seed structure has a thickness between about 3 nm to about 13 nm.

16. The method of claim 14 wherein the second seed layer is sputter deposited in a chamber maintained at a low pressure of from 3 mTorr to 30 mTorr using a NiWAX target.

17. The method of claim 14 wherein the second seed layer is reactively sputter deposited using a NiWAX target in the presence of argon and oxygen gas.

18. The method of claim 14 further comprising depositing multiple intermediate layers of ruthenium or ruthenium alloys, wherein at least one of the intermediate layers is deposited in a chamber maintained at a high pressure of from 60 mTorr to 150 mTorr.

19. The method of claim 14 wherein the recording layer is part of a perpendicular magnetic recording medium.

20. The data storage medium of claim 1 wherein the magnetic recording layer comprises a hexagonal close-packed (hcp) texture, and wherein the first seed layer and second seed layer are configured to impart the hcp texture in the magnetic recording layer.

21. The data storage medium of claim 20 wherein the hcp texture is a hcp (0002) texture.

22. The data storage medium of claim 20 wherein the first seed layer and second seed layer each comprise a (111) orientation.

23. The data storage medium of claim 1 wherein the first seed layer and second seed layer each comprise a (111) orientation.

24. The data storage medium of claim 1 wherein the first seed layer is configured to impart a face-centered cubic (111) orientation in the second seed layer.

25. A disk drive comprising:

a data storage medium; and

a head configured to read data stored in the data storage medium,

wherein the data storage medium comprises:

a seed structure above a substrate, the seed structure being formed of a first seed layer comprising a nickel alloy NiA, and a second seed layer comprising a nickel alloy Ni 1−(m+n) A m X n , where A is one or more elements selected from the group consisting of Al, B, Fe, Nb, W, and Co, and X is an oxide, where m is a value between 0.10-0.50 and n is a value between 0.01-0.10, and wherein the second seed layer is disposed on top of the first seed layer; and

a magnetic recording layer above the seed structure.

26. A disk drive comprising:

a data storage medium; and

a head configured to read data stored in the data storage medium,

wherein the data storage medium comprises:

a soft magnetic underlayer (SUL) formed over a substrate;

a seed structure above the SUL, the seed structure being formed of a first seed layer comprising a nickel alloy NiY, where Y is an element selected from the group consisting of Al, B, Fe, Nb, W, and Co, and a second seed layer comprising a nickel alloy NiWAX, where A is an element selected from the group consisting of Al, B, Fe, Nb, and Co, and X is either B, Si, Ti, Nb, V, Cr, Ru, or an oxide, and

wherein the second seed layer is disposed on top of the first seed layer, and contains one or more oxides selected from the group consisting of TiO2, SiO 2 , CrO2, Cr2O3, Al2O3, ZrO2, Ta2O5, Nb2O5, V2O5, MgO, Mg2B2O5, MnO, WO3, HfO2, and B2O3; and

a magnetic recording layer above the seed structure.

Assignments (9)
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0383 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WD MEDIA, LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0410 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2019
From: WD MEDIA, LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 049084/0826 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WD MEDIA, LLC
Reel/Frame 045501/0672 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038709/0879 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038709/0931 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0383 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2015
From: KANG, KYONGHA; HONG, DAEHOON; VU, SY; LO, CHESTER C.H.
To: WD MEDIA, LLC
Reel/Frame 036152/0153 →