IP Library Granted Patent US 9,413,375
Granted Patent B2
US 9,413,375 · App. 14/586,866 · Granted Aug 9, 2016

Analog and audio mixed-signal front end for 4G/LTE cellular system-on-chip

Inventors: Xicheng Jiang (Irvine, CA); Xinyu Yu (San Jose, CA); Fang Lin (Los Gatos, CA); Yee Ling Cheung (Irvine, CA); Michael Inerfield (Sunnyvale, CA)
Assignee: Broadcom Corporation
H03M1/185H03M1/66H04B1/0003H04B1/1646H04B1/40H04M1/0202
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,413,375
App. No.
14/586,866
Granted
Aug 9, 2016
Kind
B2
Abstract

A CMOS analog and audio front-end circuit includes an enhanced analog-to-digital converter (ADC) that achieves a desired signal-to-noise-and-distortion (SNDR) and an analog-front-end transmit (TX) digital-to-analog converter (DAC). The enhanced ADC includes an improved single Op-Amp resonator coupled to a feed-forward loop and can substantially reduce signal transfer function (STF) peaking of the enhanced ADC. The CMOS analog and audio front-end circuit is integrated with a baseband processor.

Claims (75)

1. A CMOS analog and audio front-end circuit, the circuit comprising:

an enhanced analog-to-digital converter (ADC) configured to achieve a desired signal-to-noise-and-distortion (SNDR); and

an analog-front-end transmit (TX) digital-to-analog converter (DAC),

wherein:

the enhanced ADC includes an improved single Op-Amp resonator coupled to a feed-forward loop, the feed-forward loop being coupled between an input node of the enhanced ADC and a node of a twin-T structure of the improved single Op-Amp resonator, and

the CMOS analog and audio front-end circuit is integrated with a baseband processor.

2. The circuit of claim 1 , wherein:

the enhanced ADC comprises a sigma-delta ADC,

the sigma-delta ADC comprises a programmable wideband sigma-delta ADC,

the desired SNDR comprises more than 70 SNR at 9 MHz,

the desired SNDR is scalable with power consumption, and

a lower SNDR corresponds to a lower power consumption.

3. The circuit of claim 2 , wherein:

the enhanced ADC is configured to provide a reduced STF peaking of less than 1 dB,

the programmable wideband sigma-delta ADC comprises a continuous-time (CT) sigma-delta ADC,

the enhanced ADC further comprises a DAC feedback configured to couple a delayed output signal of the enhanced ADC to a first internal node of the single Op-Amp resonator, wherein the DAC feedback is configured to reduce the STF peaking of the enhanced ADC to approximately 5 dB.

4. The circuit of claim 1 , wherein the feed-forward loop comprises a resistor and an inverter, and wherein the feed-forward loop is configured to further reduce the STF peaking, and wherein the improved single Op-Amp resonator is configured to substantially reduce signal transfer function (STF) peaking of the enhanced ADC.

5. The circuit of claim 1 , wherein the enhanced ADC comprises a direct feedback loop that is configured to feed an output signal of the enhanced ADC through a gain stage back to an input of a flash ADC of the enhanced ADC to compensate an excessive loop delay.

6. The circuit of claim 1 , wherein the single Op-Amp resonator comprises a bi-quad resonator implemented with a single Op-Amp and is configured to reduce power consumption and loop filter delay.

7. The circuit of claim 1 , wherein the analog-front-end TX DAC is configured to provide more than 13-bit linearity and less than 8 nV/sqrtHz noise density at 30 MHz.

8. The circuit of claim 1 , wherein:

the analog-front-end TX DAC comprises a push-pull DAC configured by using only one type of transistor,

the push-pull DAC is configured by using only PMOS transistors, and

the push-pull DAC is configured to substantially reduce a drive current, noise, and code-dependent output impedance variation.

9. The circuit of claim 1 , wherein:

the circuit further comprises a high-fidelity audio sub-system configured to provide substantially high linearity,

the high-fidelity audio sub-system is configured to integrate a headset DAC and a power amplifier into the base-band processor without using a buffer circuit between the headset DAC and the power amplifier,

the high-fidelity audio sub-system is configured to provide more than 110 dB SNR in a play-back path and more than 92 dB SNR in a capture path,

the high-fidelity audio sub-system comprises compound complementary switches implemented in laterally-diffused MOS (LDMOS) and configured to close one of a microphone bias path or a data path reliably and level shifters configured to improve total harmonic distortion (THD) for mid-range input voltages.

10. A method of providing a CMOS analog and audio front-end circuit, the method comprising:

providing an enhanced analog-to-digital converter (ADC) configured to achieve a desired signal-to-noise-and-distortion ratio (SNDR);

coupling an improved single Op-Amp resonator of the enhanced ADC to a feed-forward loop coupled between an input node of the enhanced ADC and a node of a twin-T structure of the improved single Op-Amp resonator; and

providing an analog-front-end transmit (TX) digital-to-analog converter (DAC) and configuring the analog-front-end TX DAC to provide a substantial linearity,

wherein,

the enhanced ADC and the analog-front-end TX DAC are integrated with a baseband processor.

11. The method of claim 10 , wherein:

providing the enhanced ADC comprises providing a sigma-delta ADC,

providing the sigma-delta ADC comprises providing a programmable wideband sigma-delta ADC,

achieving the desired SNDR comprises achieving more than 70 SNR at 9 MHz,

the desired SNDR is scalable with power consumption, and

a lower SNDR corresponds to a lower power consumption.

12. The method of claim 11 , further comprising:

configuring the enhanced ADC to provide a reduced STF peaking of less than 1 dB,

providing the programmable wideband sigma-delta ADC comprises providing a continuous-time (CT) sigma-delta ADC,

configuring a DAC feedback of the enhanced ADC to couple a delayed output signal of the enhanced ADC to a first internal node of the single Op-Amp resonator, and

configuring the DAC feedback to reduce the STF peaking of the enhanced ADC to approximately 5 dB.

13. The method of claim 10 , further comprising:

configuring the improved single Op-Amp resonator to substantially reduce signal transfer function (STF) peaking of the enhanced ADC;

configuring the feed-forward loop by using a resistor and an inverter, and

configuring the feed-forward loop to further reduce the STF peaking.

14. The method of claim 10 , further comprising coupling a direct feedback loop to feed an output signal of the enhanced ADC through a gain stage back to an input of a flash ADC of the enhanced ADC to compensate an excessive loop delay.

15. The method of claim 10 , wherein the single Op-Amp resonator comprises a bi-quad resonator implemented with a single Op-Amp, and wherein the method comprises configuring the bi-quad resonator to reduce power consumption and loop filter delay.

16. The method of claim 10 , further comprising configuring the analog-front-end TX DAC to provide more than 13-bit linearity and less than 8 nV/sqrtHz noise density at 30 MHz.

17. The method of claim 10 , further comprising:

configuring a push-pull DAC of the analog-front-end TX DAC by using only one type of transistor,

configuring the push-pull DAC by using only PMOS transistors, and

configuring the push-pull DAC to substantially reduce a drive current, noise, and a code-dependent output impedance variation.

18. The method of claim 10 , further comprising:

providing a high-fidelity audio sub-system integrated with the baseband processor,

configuring the high-fidelity audio sub-system to integrate a headset DAC and a power amplifier into the base-band processor without using a buffer circuit between the headset DAC and the power amplifier,

configuring the high-fidelity audio sub-system to provide more than 110 dB SNR in a play-back path and more than 92 dB SNR in a capture path,

implementing compound complementary switches of the high-fidelity audio sub-system in laterally-diffused MOS (LDMOS), and

configuring the compound complementary switches to close one of a microphone bias path or a data path reliably and level shifters configured to improve total harmonic distortion (THD) for mid-range input voltages.

19. A communication device, comprising:

a radio-frequency integrated circuit (RFIC) configured to communicate RF signals; and

a baseband processor coupled to the RFIC, the baseband processor including a CMOS analog and audio front-end circuit comprising:

an enhanced analog-to-digital converter (ADC) including an improved single Op-Amp resonator and configured to achieve a desired signal-to-noise-and-distortion ratio (SNDR); and

an analog-front-end transmit (TX) digital-to-analog converter (DAC),

wherein, the improved single Op-Amp resonator is coupled to a feed-forward loop at a node of a twin-T structure of the improved single Op-Amp resonator, the feed-forward loop being coupled to an input node of the enhanced ADC.

20. The communication device of claim 19 , wherein:

the enhanced ADC is configured to provide a reduced STF peaking of less than 1 dB,

the programmable wideband sigma-delta ADC comprises a continuous-time (CT) sigma-delta ADC,

the enhanced ADC further comprises a DAC feedback configured to couple a delayed output signal of the enhanced ADC to a first internal node of the single Op-Amp resonator, wherein the DAC feedback is configured to reduce the STF peaking of the enhanced ADC to approximately 5 dB,

the analog-front-end TX DAC comprises a push-pull DAC configured by using only PMOS transistors,

the circuit further comprises a high-fidelity audio sub-system configured to integrate a headset DAC and a power amplifier into the base-band processor without using a buffer circuit between the headset DAC and the power amplifier and to provide substantial linearity.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT NUMBER 9,385,856 TO 9,385,756 PREVIOUSLY RECORDED AT REEL: 47349 FRAME: 001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 22, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 051144/0648 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE PREVIOUSLY RECORDED ON REEL 047229 FRAME 0408. ASSIGNOR(S) HEREBY CONFIRMS THE THE EFFECTIVE DATE IS 09/05/2018. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047349/0001 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047229/0408 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: BROADCOM CORPORATION
Reel/Frame 041712/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2017
From: BROADCOM CORPORATION
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041706/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: BROADCOM CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037806/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 12, 2015
From: JIANG, XICHENG; YU, XINYN; LIN, FANG; CHEUNG, YEE LING; INERFIELD, MICHAEL
To: BROADCOM CORPORATION
Reel/Frame 034954/0217 →
Continuity (2)
Provisional Application 61923523 · Jan 3, 2014
Related Publication 20150194979A1 · Jul 9, 2015