IP Library Granted Patent US 9,570,498
Granted Patent B2
US 9,570,498 · App. 14/587,401 · Granted Feb 14, 2017

Image sensor device with first and second source followers and related methods

Inventors: François Roy (Seyssins, FR); Frédéric Lalanne (Bernin, FR); Pierre Emmanuel Marie Malinge (La Tessoualle, FR)
Assignee: STMICROELECTRONICS (CROLLES 2) SAS
H01L27/14643H01L27/14689
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Quick Facts
Patent No.
US 9,570,498
App. No.
14/587,401
Granted
Feb 14, 2017
Kind
B2
Abstract

An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

Claims (71)

1. An image sensor device comprising:

an array of image sensing pixels arranged in rows and columns, each image sensing pixel comprising

an image sensing photodiode,

a first source follower transistor coupled to said image sensing photodiode,

at least one switch coupled to said image sensing photodiode,

a second source follower transistor coupled to said at least one switch,

a row selection transistor coupled to the first and second source follower transistors,

a transfer transistor coupled between said image sensing photodiode and said at least one switch, and

a reset transistor coupled between a second reference voltage and said transfer transistor, said at least one switch comprising

a third transistor having a first conduction terminal coupled to said second source follower transistor and a second conduction terminal coupled to said transfer transistor, and

a fourth transistor coupled to said third transistor.

2. The image sensor device of claim 1 wherein said fourth transistor is coupled between a first reference voltage and said third transistor.

3. The image sensor device of claim 1 wherein said third transistor is configured to operate based upon a reset signal.

4. The image sensor device of claim 1 wherein each image sensing pixel comprises a sensing node photodiode having an anode coupled to a first reference voltage and a cathode coupled to said transfer transistor.

5. The image sensor device of claim 1 wherein said reset transistor comprises a control terminal coupled to a reset command signal node.

6. An electronic device comprising:

a processor; and

an array of image sensing pixels coupled to said processor and arranged in rows and columns, each image sensing pixel comprising

an image sensing photodiode,

a first source follower transistor coupled to said image sensing photodiode,

at least one switch coupled to said image sensing photodiode,

a second source follower transistor coupled to said at least one switch,

a row selection transistor coupled to the first and second source follower transistors,

a transfer transistor coupled between said image sensing photodiode and said at least one switch, and

a reset transistor coupled between a second reference voltage and said transfer transistor, said at least one switch comprising

a third transistor having a first conduction terminal coupled to said second source follower transistor and a second conduction terminal coupled to said transfer transistor, and

a fourth transistor coupled to said third transistor.

7. The electronic device of claim 6 wherein said fourth transistor is coupled between a first reference voltage and said third transistor.

8. The electronic device of claim 6 wherein said third transistor is configured to operate based upon a reset signal.

9. The electronic device of claim 6 wherein said reset transistor comprises a control terminal coupled to a reset command signal node.

10. The electronic device of claim 6 wherein each image sensing pixel comprises a sensing node photodiode having an anode coupled to a first reference voltage and a cathode coupled to said transfer transistor.

11. A method for making an image sensor device comprising:

forming an array of image sensing pixels arranged in rows and columns, each image sensing pixel comprising

an image sensing photodiode,

a first source follower transistor coupled to the image sensing photodiode,

at least one switch coupled to the image sensing photodiode,

a second source follower transistor coupled to the at least one switch,

a row selection transistor coupled to the first and second source follower transistors,

a transfer transistor coupled between the image sensing photodiode and the at least one switch, and

a reset transistor coupled between a second reference voltage and the transfer transistor, the at least one switch comprising

a third transistor having a first conduction terminal coupled to the second source follower transistor and a second conduction terminal coupled to the transfer transistor, and

a fourth transistor coupled to the third transistor.

12. The method of claim 11 wherein the fourth transistor is coupled between a first reference voltage and the third transistor.

13. The method of claim 11 wherein the third transistor is configured to operate based upon a reset signal.

14. The method of claim 11 wherein the reset transistor comprises a control terminal coupled to a reset command signal node.

15. The method of claim 11 wherein each image sensing pixel comprises a sensing node photodiode having an anode coupled to a first reference voltage and a cathode coupled to the transfer transistor.

16. An image sensor device comprising:

an array of image sensing pixels arranged in rows and columns, each image sensing pixel comprising

an image sensing photodiode,

a first source follower transistor coupled to said image sensing photodiode,

at least one switch coupled to said image sensing photodiode,

a second source follower transistor coupled to said at least one switch,

a row selection transistor coupled to the first and second source follower transistors,

a transfer transistor coupled between said image sensing photodiode and said at least one switch,

a reset transistor coupled between a second reference voltage and said transfer transistor, said at least one switch comprising a third transistor having a first conduction terminal coupled to said second source follower transistor and a second conduction terminal coupled to said transfer transistor, and

a fourth transistor coupled between the second reference voltage and said second source follower transistor.

17. The image sensor device of claim 16 wherein said third transistor is configured to operate based upon a reset signal.

18. The image sensor device of claim 16 wherein each image sensing pixel comprises a sensing node photodiode having an anode coupled to a first reference voltage and a cathode coupled to said transfer transistor.

19. An electronic device comprising:

a processor; and

an array of image sensing pixels coupled to said processor and arranged in rows and columns, each image sensing pixel comprising

an image sensing photodiode,

a first source follower transistor coupled to said image sensing photodiode,

at least one switch coupled to said image sensing photodiode,

a second source follower transistor coupled to said at least one switch,

a row selection transistor coupled to the first and second source follower transistors,

a transfer transistor coupled between said image sensing photodiode and said at least one switch,

a reset transistor coupled between a second reference voltage and said transfer transistor, said at least one switch comprising a third transistor having a first conduction terminal coupled to said second source follower transistor and a second conduction terminal coupled to said transfer transistor, and

a fourth transistor coupled between the second reference voltage and said second source follower transistor.

20. The electronic device of claim 19 wherein said third transistor is configured to operate based upon a reset signal.

21. The electronic device of claim 19 wherein each image sensing pixel comprises a sensing node photodiode having an anode coupled to a first reference voltage and a cathode coupled to said transfer transistor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2023
From: STMICROELECTRONICS (CROLLES 2) SAS
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 063276/0569 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2015
From: ROY, FRANCOIS; LALANNE, FREDERIC; MALINGE, PIERRE EMMANUEL MARIE
To: STMICROELECTRONICS (CROLLES 2) SAS
Reel/Frame 035285/0009 →
Continuity (1)
Related Publication 20160190199A1 · Jun 30, 2016