IP Library Granted Patent US 9,400,402
Granted Patent B2
US 9,400,402 · App. 14/590,296 · Granted Jul 26, 2016

Optical waveguide and optical device based on the same

Inventors: Jong Moo Lee (Sejong, KR); Min Su Kim (Daejeon, KR)
Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
G02F1/0147G02F1/011G02F1/225G02B6/122G02B2006/12061G02B2006/12142G02F1/025G02F2001/212G02F2202/105G02F2203/04
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Quick Facts
Patent No.
US 9,400,402
App. No.
14/590,296
Granted
Jul 26, 2016
Kind
B2
Abstract

Disclosed is a technology related to an optical waveguide which is insensitive to an ambient temperature and is capable of adjusting a wavelength error due to a manufacturing processing deviation. The optical waveguide includes: a clad layer positioned on a substrate; a core layer positioned between the substrate and the clad layer, and including patterns positioned in a first region and a second region; and a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy, in which the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer.

Claims (36)

1. An optical waveguide, comprising:

a core layer positioned on a substrate, and including patterns positioned in a first region and a second region, the core layer having a lower side which faces the substrate and an upper side opposite to the lower side;

a clad layer positioned on the upper side of the core layer; and

a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy,

wherein the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer,

wherein the core layer includes a silicon material having a positive TOC, and

wherein the clad layer includes:

a first clad layer positioned on the upper side of the core layer in the first region, and including a material having a smaller TOC than that of the silicon material included in the core layer; and

a second clad layer positioned on the upper side of the core layer in the second region and including a material having a negative TOC.

2. The optical waveguide of claim 1 , wherein the first region is smaller than the second region.

3. The optical waveguide of claim 1 , wherein the wavelength adjusting unit generates heat based on the received electric energy, and provides the generated heat to the patterns passing through the first region to adjust a wavelength of an optical signal propagated through the patterns passing through the first region.

4. The optical waveguide of claim 1 , further comprising:

a slap waveguide positioned between the substrate and the core layer.

5. The optical wavelength of claim 4 , wherein the wavelength adjusting unit includes a first wavelength adjusting unit on one side of the patterns in the first region and a second wavelength adjusting unit on the other side of the patterns in the first region, and the first and second wavelength adjusting units have a height greater than a thickness of the slap waveguide.

6. The optical waveguide of claim 1 , wherein the optical waveguide is used in an optical device based on the optical waveguide.

7. The optical waveguide of claim 1 , wherein the wavelength adjusting unit includes a first wavelength adjusting unit on one side of the patterns in the first region and a second wavelength adjusting unit on the other side of the patterns in the first region, and the first and second wavelength adjusting units are formed of a same material.

8. An optical device based on an optical waveguide, comprising:

a substrate; and

a ring resonator positioned on the substrate,

wherein the ring resonator includes:

a core layer positioned on the substrate, and including at least one ring waveguide positioned in a first region and a second region, the core layer having a lower side which faces the substrate and an upper side opposite to the lower side;

a clad layer positioned on the upper side of the core layer; and

a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through a ring waveguide passing through the first region based on received electric energy,

wherein the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer,

wherein the core layer includes a silicon material having a positive TOC, and

wherein the clad layer includes:

a first clad layer positioned on the upper side of the core layer in the first region, and including a material having a smaller TOC than that of the silicon material included in the core layer; and

a second clad layer positioned on the upper side of the core layer in the second region and including a material having a negative TOC.

9. The optical device of claim 8 , wherein the first region is smaller than the second region.

10. The optical device of claim 8 , wherein the wavelength adjusting unit generates heat based on the received electric energy, and provides the generated heat to the ring waveguide passing through the first region to adjust a wavelength of an optical signal propagated through the ring waveguide passing through the first region.

11. The optical device of claim 8 , further comprising:

a slap waveguide positioned between the substrate and the core layer.

12. The optical device of claim 11 , wherein the wavelength adjusting unit includes a first wavelength adjusting unit on one side of the patterns in the first region and a second wavelength adjusting unit on the other side of the patterns in the first region, and the first and second wavelength adjusting units have a height greater than a thickness of the slap waveguide.

13. The optical device of claim 8 , wherein the wavelength adjusting unit includes a first wavelength adjusting unit on one side of the patterns in the first region and a second wavelength adjusting unit on the other side of the patterns in the first region, and the first and second wavelength adjusting units are formed of a same material.

14. The optical device of claim 8 , when taken from a plan view, the first region is a region corresponding to a range of a predetermined acute center angle relative to a center of a circle formed by the at least one ring waveguide.

15. The optical device of claim 14 , when taken from a plan view, the wavelength adjusting unit extends in the first region along the at least one ring waveguide and forms a center angle relative to the center of the circle not greater than the predetermined acute center angle of the first region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2015
From: LEE, JONG MOO; KIM, MIN SU
To: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Reel/Frame 034644/0250 →
Priority Claims (2)
KR 10-2014-0001917 · Jan 7, 2014 · national
KR 10-2014-0086779 · Jul 10, 2014 · national
Continuity (1)
Related Publication 20150192803A1 · Jul 9, 2015