Thin film transistor and method of manufacturing the same
View Patent ↗As source and drain wiring, a base layer and a cap layer are each formed of a MoNiNb alloy film, and a low-resistance layer is formed of Cu. The resultant laminated metal film is patterned through one-time wet etching to form a drain electrode and a source electrode. Cu serving as a main wiring layer does not corrode because of being covered with a MoNiNb alloy having good corrosion resistance. Further, even when a protective insulating film including an oxide is formed by plasma CVD in an oxidizing atmosphere, Cu is not oxidized. With the wet etching, the sidewall taper angle of the laminated metal film can be controlled to 20 degrees or more and less than 70 degrees.
1. A thin film transistor, comprising:
a gate electrode;
a channel layer containing an oxide semiconductor;
a gate insulating film disposed between the gate electrode and the channel layer;
a protective film; and
a source electrode and a drain electrode disposed between the protective film and the channel layer
wherein:
at least one of the source electrode and the drain electrode, is formed of a laminated metal film comprising a lower barrier layer, a low-resistance main wiring layer, and an upper cap layer arranged in order when viewed from the channel layer toward the protective film;
the low-resistance main wiring layer contains one of copper and a copper alloy; and
both of the lower barrier layer and the upper cap layer contain a molybdenum alloy containing nickel and niobium,
wherein the molybdenum alloy contains 10 to 40 atomic % of nickel and 4 to 20 atomic % of niobium, with the balance being molybdenum.
2. The thin film transistor according to claim 1 , wherein:
the source electrode and the drain electrode are disposed on the channel layer so as to be separated from each other with a space therebetween; and
the protective film covers the source electrode, the drain electrode, and the channel layer in a part exposed in the space.
3. The thin film transistor according to claim 1 , wherein at least one of the source electrode and the drain electrode, formed of the laminated metal film comprising the lower barrier layer, the low-resistance main wiring layer, and the upper cap layer has a sidewall taper angle of 20 degrees or more and less than 70 degrees.
4. The thin film transistor according to claim 1 , wherein both of the source electrode and the drain electrode are formed of the laminated metal film.
5. The thin film transistor according to claim 1 , wherein the molybdenum alloy contains 15 to 20 atomic % of nickel and 5 to 10 atomic % of niobium, with the balance being molybdenum.
6. A thin film transistor, comprising:
a gate electrode;
a channel layer containing an oxide semiconductor;
a gate insulating film disposed between the gate electrode and the channel layer;
a protective film; and
a source electrode and a drain electrode disposed between the protective film and the channel layer, wherein:
the gate electrode is formed of a laminated metal film comprising a lower barrier layer, a low-resistance main wiring layer, and an upper cap layer arranged in order when viewed from the channel layer toward the protective film;
the low-resistance main wiring layer contains one of copper and a copper alloy; and
both of the lower barrier layer and the upper cap layer contains a molybdenum alloy containing nickel and niobium,
wherein the molybdenum alloy contains 10 to 40 atomic % of nickel and 4 to 20 atomic % of niobium, with the balance being molybdenum.
7. The thin film transistor according to claim 6 , wherein the gate electrode formed of the laminated metal film has a sidewall taper angle of 20 degrees or more and less than 70 degrees.
8. The thin film transistor according to claim 6 , wherein the molybdenum alloy contains 15 to 20 atomic % of nickel and 5 to 10 atomic % of niobium, with the balance being molybdenum.