Semiconductor device
View Patent ↗The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW 1 on the side of a magnetization fixed layer MFX 1 . A magnetic wall MW 2 is moved to the magnetic wall MW 1 side by causing current to flow from the formed side of the magnetic wall MW 1 . Thus, an electrical resistance R MTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.
1. A semiconductor device comprising:
a magnetization free layer;
a reference layer electrically coupled to a first surface of the magnetization free layer;
a first magnetization fixed layer provided in the vicinity of the magnetization free layer;
a first wiring electrically and physically coupled directly to the magnetization free layer at a first location the magnetization free layer; and
a second wiring electrically and physically coupled directly to the magnetization free layer at a second location the magnetization free layer,
wherein the first magnetization fixed layer is not electrically coupled to the magnetization free layer, and
wherein the first wiring and the second wiring are distinct from each other.
2. The semiconductor device according to claim 1 , further including a second magnetization fixed layer provided in the vicinity of the magnetization free layer,
wherein the second magnetization fixed layer is not electrically coupled to the magnetization free layer, and
wherein the second magnetization fixed layer is positioned on the side opposite to the side of the first magnetization fixed layer via the reference layer as viewed from the side of the first surface.
3. The semiconductor device according to claim 2 ,
wherein a plurality of the magnetization free layers are arranged in a first direction as viewed from the side of the first surface,
wherein each of the magnetization free layers has a longitudinal direction in the first direction as viewed from the side of the first surface,
wherein in the magnetization free layers adjacent to each other in the first direction, the second magnetization fixed layer for one of the magnetization free layers and the first magnetization fixed layer for the other thereof are the same magnetization fixed layer, and
wherein the magnetization fixed layer extends from one of the magnetization free layers to the other thereof as viewed from the side of the first surface.
4. A semiconductor device comprising:
a magnetization free layer;
a reference layer electrically coupled to a first surface of the magnetization free layer;
a first magnetization fixed layer provided in the vicinity of the magnetization free layer;
a wiring electrically coupled to the magnetization free layer;
a second magnetization fixed layer provided in the vicinity of the magnetization free layer,
wherein the first magnetization fixed layer is not electrically coupled to the magnetization free layer,
wherein the second magnetization fixed layer is not electrically coupled to the magnetization free layer,
wherein the second magnetization fixed layer is positioned on the side opposite to the side of the first magnetization fixed layer via the reference layer as viewed from the side of the first surface,
wherein a plurality of the magnetization free layers are arranged in a first direction as viewed from the side of the first surface;
wherein each of the magnetization free layers has a longitudinal direction in a second direction intersecting with the first direction as viewed from the side of the first surface;
wherein the magnetization free layer and the first magnetization fixed layer are alternately provided in the first direction, and
wherein the magnetization free layer and the second magnetization fixed layer are alternately provided in the first direction.
5. The semiconductor device according to claim 4 , wherein the wiring is in contact with the magnetization free layer.
6. A semiconductor device comprising:
a magnetization free layer;
a reference layer electrically coupled to a first surface of the magnetization free layer;
a first magnetization fixed layer provided in the vicinity of the magnetization free layer;
a wiring electrically coupled to the magnetization free layer; and
a second magnetization fixed layer provided in the vicinity of the magnetization free layer,
wherein the first magnetization fixed layer is not electrically coupled to the magnetization free layer,
wherein the second magnetization fixed layer is not electrically coupled to the magnetization free layer,
wherein the first magnetization fixed layer and the second magnetization fixed layer are provided on the side of one end in a longitudinal direction of the magnetization free layer as viewed from the side of the first surface, and
wherein the first magnetization fixed layer and the second magnetization fixed layer are opposed to each other via the magnetization free layer in a lateral direction of the magnetization free layer as viewed from the side of the first surface.
7. The semiconductor device according to claim 6 , wherein the wiring is electrically coupled directly to the magnetization free layer.