Test then destroy technique for security-focused semiconductor integrated circuits

1. A method comprising:

forming an integrated circuit device having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate;

testing at least one operational aspect of the device circuitry using the destroyable circuit; and

destroying the destroyable circuit by removing at least a portion of the destroyable circuit from the substrate without destroying the substrate within the destroyable circuitry area subsequent to testing the at least one operational aspect of the device circuitry.

2. The method of claim 1 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry is performed by laser ablation within the destroyable circuitry area.

3. The method of claim 2 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry includes complete removal of a conductive interconnect layer of the destroyable circuit from the substrate.

4. The method of claim 2 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry includes complete removal of the destroyable circuit from the substrate.

5. The method of claim 1 , wherein the destroyable circuit is connected to the device circuitry by a plurality of testing interconnections.

6. The method of claim 5 , wherein each testing interconnection includes a fuse.

7. The method of claim 1 , wherein testing at least one operational aspect of the device circuitry using the destroyable circuit includes engaging a plurality of probes of a testing apparatus with a corresponding plurality of probe pads that are associated with the testing controller.

8. A method comprising:

forming an integrated circuit device having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate, wherein forming the integrated circuit device includes defining a sacrificial gap that separates the destroyable circuitry area and the device circuitry area;

testing at least one operational aspect of the device circuitry using the destroyable circuit; and

destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry.

9. The method of claim 8 , wherein the integrated circuit device includes a seal ring, and at least part of the sacrificial gap is disposed adjacent to the seal ring to separate the destroyable circuit from the seal ring.

10. A method comprising:

forming an integrated circuit device having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate, wherein the destroyable circuit is connected to the device circuitry by a plurality of testing interconnections and each testing interconnection includes a fuse;

testing at least one operational aspect of the device circuitry using the destroyable circuit;

destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry; and

blowing the fuse of each testing interconnection prior to destroying the destroyable circuit.

11. A method comprising:

forming an integrated circuit device having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate;

testing at least one operational aspect of the device circuitry using the destroyable circuit;

destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry; and

dicing a semiconductor wafer including the integrated circuit device subsequent to destroying the destroyable circuit.

12. A method comprising:

forming an integrated circuit device having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate;

testing at least one operational aspect of the device circuitry using the destroyable circuit;

destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry; and

dicing a semiconductor wafer including the integrated circuit device subsequent to testing at least one operational aspect of the device circuitry and prior to destroying the destroyable circuit.

13. A method comprising:

forming a semiconductor wafer that includes a plurality of integrated circuit devices having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate;

testing at least one operational aspect of the device circuitry of each of the integrated circuit devices using the destroyable circuit of the respective one of the integrated circuit devices; and

destroying the destroyable circuit of each of the integrated circuit devices by removing at least a portion of the destroyable circuit from the substrate without destroying the substrate within the destroyable circuitry area subsequent to testing the at least one operational aspect of the device circuitry.

14. The method of claim 13 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry is performed by laser ablation within the destroyable circuitry area.

15. The method of claim 14 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry includes complete removal of a conductive interconnect layer of the destroyable circuit from the substrate.

16. The method of claim 14 , wherein destroying the destroyable circuit subsequent to testing the at least one operational aspect of the device circuitry includes complete removal of the destroyable circuit from the substrate.

17. A method comprising:

forming a semiconductor wafer that includes a plurality of integrated circuit devices having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate, wherein forming each integrated circuit device includes defining a sacrificial gap that separates the destroyable circuitry area and the device circuitry area;

testing at least one operational aspect of the device circuitry of each of the integrated circuit devices using the destroyable circuit of the respective one of the integrated circuit devices; and

destroying the destroyable circuit of each of the integrated circuit devices subsequent to testing the at least one operational aspect of the device circuitry.

18. The method of claim 17 , wherein the integrated circuit device includes a seal ring, and at least part of the sacrificial gap is disposed adjacent to the seal ring to separate the destroyable circuit from the seal ring.

19. A method comprising:

forming a semiconductor wafer that includes a plurality of integrated circuit devices having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate, wherein the destroyable circuit is connected to the device circuitry by a plurality of testing interconnections, and each testing interconnection includes a fuse;

testing at least one operational aspect of the device circuitry of each of the integrated circuit devices using the destroyable circuit of the respective one of the integrated circuit devices;

destroying the destroyable circuit of each of the integrated circuit devices subsequent to testing the at least one operational aspect of the device circuitry; and

blowing the fuse of each testing interconnection prior to destroying the destroyable circuit.

20. A method comprising:

forming a semiconductor wafer that includes a plurality of integrated circuit devices having device circuitry disposed in a device circuitry area on a substrate and a destroyable circuit formed in a destroyable circuitry area on the substrate;

testing at least one operational aspect of the device circuitry of each of the integrated circuit devices using the destroyable circuit of the respective one of the integrated circuit devices;

destroying the destroyable circuit of each of the integrated circuit devices subsequent to testing the at least one operational aspect of the device circuitry; and

dicing the semiconductor wafer including the integrated circuit device subsequent to destroying the destroyable circuit.