Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
1. A gallium and nitrogen containing laser diode device, the device comprising:
a gallium and nitrogen containing material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar crystal orientation configured with an orientation of {10-10} with an offcut at an angle toward or away from the [0001] direction;
a gallium and nitrogen containing region formed overlying the surface region;
an active region formed overlying the surface region;
a gettering region comprising a magnesium species overlying the surface region; and
a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region;
whereupon the gettering region is provided at a temperature of less than about 900° C.
2. The device of claim 1 , where the semipolar crystal orientation is selected from one of a {30-3-1} plane, a {30-31} plane, a{20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
3. The device of claim 1 , further comprising an electron blocking region between the gettering region and the p-type cladding region.
4. The device of claim 3 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900° C.
5. The device of claim 3 , wherein the electron blocking region and at least a portion of the p-type cladding region are epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
6. The device of claim 3 , wherein the electron blocking region is substantially free from magnesium doping.
7. The device of claim 1 , further comprising a barrier region between the active region and the gettering region.
8. The device of claim 1 , further comprising a separate confinement heterostructure region between the active region and the gettering region, wherein the separate confinement heterostructure region is configured to confine an optical mode; the separate confinement heterostructure comprising InGaN.
9. The device of claim 1 , wherein the p-type cladding region comprises a plurality of layers, each of the plurality of layers independently selected from a GaN layer, an AlGaN layer, and an InAlGaN layer, where in each of the plurality of layers is independently doped with a concentration of magnesium.
10. The device of claim 1 , wherein the gettering region comprises a magnesium species doped to increase incorporation of unintentionally incorporated magnesium from a first concentration to a second concentration.
11. The device of claim 1 , wherein the active region comprises InGaN quantum wells configured to emit in a blue 430 nm to 480 nm wavelength range or in a green 500 nm to 540 nm wavelength range.
12. The device of claim 1 , wherein the p-type cladding region comprises a single layer.
13. The device of claim 1 , wherein the p-type region comprises multiple regions.
14. The device of claim 1 , wherein the active region comprises one or more light emitting layers, each of the one or more lighting emitting layers being configured between a pair of barrier regions, each of the one or more lighting emitting layers having a thickness ranging from 2 nm to about 8 nm; and wherein each of the one or more barrier regions has a thickness ranging from 2 nm to 20 nm or from 2 nm to 4 nm or 4 to 20 nm.
15. The device of claim 1 , further comprising a GaN barrier region and wherein the p-type cladding region is a GaN p-cladding region substantially free from an aluminum bearing species.
16. The device of claim 1 , wherein the p-type cladding region is a GaN p-cladding doped with a Mg concentration of less than 2E19 cm −3 or less than about 5E18 cm −3 .
17. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C.
18. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
19. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 950° C. and the gettering region is provided at a temperature of less than about 850° C.
20. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above 1,000° C. and the gettering region is provided at a temperature of less than about 850° C.
21. The device of claim 1 , wherein the gettering region comprises:
a region intentionally doped with Mg; and
a region unintentionally doped with Mg region wherein the unintentionally doped region is configured to incorporate residual Mg before formation of the p-type region.
22. The device of claim 1 , wherein the gettering region is characterized by a thickness from 2 nm to 50 nm.
23. The device of claim 1 , wherein the gettering region comprises a material selected from GaN, AlGaN, InAlGaN, and a combination of any of the foregoing.
24. The device of claim 1 , wherein the device is provided in an application selected from at least one of a laser display, medical, a light, or combinations thereof.
25. A method for manufacturing a gallium and nitrogen containing laser diode device, the method comprising:
providing a gallium and nitrogen containing substrate material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar crystal orientation configured with an orientation of {10-10} with an offcut at an angle toward or away from the [0001] direction;
forming a gallium and nitrogen containing region overlying the surface region;
forming an active region overlying the surface region;
forming a gettering region comprising a magnesium species overlying the surface region at a temperature of 900° C. and less; and
forming a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species overlying the active region.
26. The method of claim 25 , wherein the semi-polar crystal orientation is selected from a {40-4-1} plane, a {40-41} plane, a {30-3-1} plane, a {30-31} plane, a {20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
27. The method of claim 25 , further comprising forming an electron blocking region between the gettering region and the p-type cladding region.
28. The method of claim 27 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900 C.
29. The method of claim 27 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
30. The method of claim 27 , wherein the electron blocking region is substantially free from magnesium doping.
31. The method of claim 25 , further comprising forming a barrier region between the active region and the gettering region.
32. The method of claim 25 , further comprising forming a separate confinement heterostructure region between the active region and the gettering region, wherein the separate confinement heterostructure configured to confine an optical mode.
33. The method of claim 25 , wherein the p-type cladding region comprises a plurality of layers, each of the plurality of layers comprising a material independently selected from GaN, AlGaN, and InAlGaN, wherein each of the plurality of layers is independently doped with a concentration of magnesium.
34. The method of claim 25 , wherein the gettering region comprises a magnesium species doped to increase incorporation of unintentionally incorporated magnesium from a first concentration to a second concentration.
35. The method of claim 25 , wherein the active region comprises InGaN quantum wells configured to emit in a blue 430 nm to 480 nm wavelength range or in the green 500 nm to 540 nm wavelength range.
36. The method of claim 25 , wherein the p-type cladding region comprises a single layer.
37. The method of claim 25 , wherein the p-type region comprises multiple regions.
38. The method of claim 25 , wherein the active region comprises one or more light emitting layers, each of the one or more lighting emitting layers being configured between a pair of barrier regions, each of the one or more lighting emitting layers having a thickness ranging from 2 nm to about 8 nm; and wherein each of the barrier regions has a thickness ranging from 2 nm to 20 nm or from 2 to 4 nm or 4 to 20 nm.
39. The method of claim 25 , further comprising forming a GaN barrier region; and wherein the p-type cladding region is a GaN p-cladding region substantially free from an aluminum bearing species.
40. The method of claim 25 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C.
41. The method of claim 25 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than 850° C.
42. The method of claim 25 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 950° C. and the gettering region is provided at a temperature of less than about 850° C.
43. The method of claim 25 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 1,000° C. and the gettering region is provided at a temperature of less than about 850° C.
44. The method of claim 25 , wherein the gettering region comprise:
a region intentionally doped with Mg; and
a region unintentionally doped with Mg, wherein the unintentionally doped region is configured to incorporate residual Mg before formation of the p-type region.
45. The method of claim 25 , wherein the gettering region comprises a thickness of 2 nm to 50 nm.
46. The method of claim 25 , wherein the gettering region comprises a material selected from GaN, AlGaN, InAlGaN, and a combination of any of the foregoing.
47. The method of claim 25 , wherein the device is used in a laser display, a medical application, a light, or combinations thereof.