Method for manufacturing semiconductor device
To form a MOSFET over a silicon carbide substrate, when a heat treatment accompanied by nitration is carried out to reduce the interface state density in the vicinity of the boundary between a gate insulating film and a silicon carbide substrate, CV hysteresis occurs due to the relationship between the capacitance and gate voltage of the MOSFET, thereby reducing the reliability of a semiconductor device. To solve the above problem, a heat treatment accompanied by nitration is carried out on the insulating film formed over the silicon carbide substrate (step S 7 ). Then, the insulating film is heated in an inert gas atmosphere (step S 9 ). Thereafter, a field effect transistor having a gate insulating film which is composed of the insulating film is formed over the silicon carbide substrate.
1. A method for manufacturing a semiconductor device, comprising:
preparing a silicon carbide substrate;
forming a source/drain region in the silicon carbide substrate;
forming a first insulating film over the top surface of the silicon carbide substrate;
carrying out a first heat treatment accompanied by nitration on the first insulating film and the silicon carbide substrate in a first gas atmosphere;
after the carrying out of the first heat treatment and after a temperature of the silicon carbide substrate has become 700° C. or less, removing the silicon carbide substrate from a processing apparatus and exposing the silicon carbide substrate to air in an atmosphere outside of the processing apparatus;
after the exposing of the silicon carbide substrate to air in the atmosphere, carrying out a second heat treatment on the first insulating film and the silicon carbide substrate in a second gas atmosphere which is an inert gas; and
after the carrying out of the second heat treatment, forming a gate electrode through the first insulating film over the silicon carbide substrate, wherein the gate electrode, the first insulating film and the source/drain region include a field effect transistor.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the forming of the first insulating film comprises performing a heat treatment on the silicon carbide substrate to form the first insulating film over the top surface of the silicon carbide substrate.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein the performing of the heat treatment is carried out in an atmosphere comprising at least one member selected from the group consisting of oxygen and vapor.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the first insulating film is formed by using an ALD or CVD method in the forming of the first insulating film.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the forming of the first insulating film comprises:
performing a heat treatment on the silicon carbide substrate to form an insulating film over the top surface of the silicon carbide substrate, and
forming an other insulating film over the insulating film by using an ALD or CVD method, to form the first insulating film including the insulating film and the other insulating film.
6. The method for manufacturing a semiconductor device according to claim 5 , further comprising:
after the performing of the heat treatment and before the forming of the other insulating film, carrying out a heat treatment accompanied by nitration on the insulating film and the silicon carbide substrate in the first gas atmosphere.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the first gas comprises at least one member selected from the group consisting of dinitrogen monoxide, nitrogen monoxide and ammonia gases.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein the second gas comprises at least one member selected from the group consisting of nitrogen, argon and helium gases.
9. The method for manufacturing a semiconductor device according to claim 1 , wherein the second heat treatment is carried out at 850 ° C. or higher.
10. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
after the preparing of the silicon carbide substrate and before the forming of the source/drain region, forming a groove in the main surface of the silicon carbide substrate,
wherein the gate electrode is formed in the groove in the forming of the gate electrode.
11. The method for manufacturing a semiconductor device according to claim 1 , wherein the second heat treatment is carried out at 1000° C. or greater.
12. A method for manufacturing a semiconductor device, comprising:
preparing a silicon carbide substrate;
forming a first insulating film over the top surface of the silicon carbide substrate;
carrying out a first heat treatment accompanied by nitration on the first insulating film and the silicon carbide substrate in a first gas atmosphere; and
after the carrying out of the first heat treatment, and after a temperature of the silicon carbide substrate has become 700° C. or less, removing the silicon carbide substrate from a processing apparatus and exposing the silicon carbide substrate to air in an atmosphere outside of the processing apparatus;
after the exposing of the silicon carbide substrate to air in the atmosphere, carrying out a second heat treatment on the first insulating film and the silicon carbide substrate in a second gas atmosphere which comprises an inert gas.
13. The method of claim 12 , further comprising:
before the forming of the first insulating film, forming a source/drain region in the silicon carbide substrate.
14. The method of claim 12 , further comprising:
after the carrying out of the second heat treatment, patterning the first insulating film to form a gate insulating film.
15. A method for manufacturing a semiconductor device, comprising:
preparing a silicon carbide substrate;
forming a first insulating film on the silicon carbide substrate;
carrying out a first heat treatment accompanied by nitration on the first insulating film and the silicon carbide substrate in a first gas atmosphere;
after the carrying out of the first heat treatment and after a temperature of the silicon carbide substrate has become 700° C. or less, removing the silicon carbide substrate from a processing apparatus and exposing the first insulating film and the silicon carbide substrate to air in an atmosphere outside of the processing apparatus;
after the removing of the silicon carbide substrate from a processing apparatus and the exposing of the silicon carbide substrate to air in the atmosphere, carrying out a second heat treatment on the first insulating film and the silicon carbide substrate in a second gas atmosphere which comprises an inert gas, the second heat treatment is carried out at 850° C. or greater; and
after the carrying out of the second heat treatment, patterning the first insulating film to form a gate insulating film.
16. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
after the preparing of the silicon carbide substrate and before the forming of the source/drain region, forming a groove in the main surface of the silicon carbide substrate, the gate electrode being formed in the groove in the forming of the gate electrode; and
after the carrying out of the second heat treatment, patterning the first insulating film to form a gate insulating film.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein the forming of the first insulating film comprises:
performing a heat treatment on the silicon carbide substrate to form an insulating film over the top surface of the silicon carbide substrate, and
forming an other insulating film over the insulating film by using an ALD or CVD method, to form the first insulating film including the insulating film and the other insulating film.