Super junction LDMOS finFET devices

1. A fin-based field effect transistor (finFET) device, comprising:

a substrate material having a top surface and a bottom surface;

a first well region formed in the substrate material and comprising a first type of dopant;

a first fin structure disposed on the top surface of the substrate material, wherein the first fin structure comprises a first portion and a second portion, the first portion comprising the first type of dopant;

an oxide material disposed on the top surface of the substrate material and adjacent to the first portion of the first fin structure;

at least one gate structure; and

a first epitaxial material disposed over the second portion of the first fin structure, wherein the first epitaxial material comprises a second type of dopant, and wherein the first epitaxial material is adjacent to the at least one gate structure.

2. The finFET device of claim 1 :

wherein the at least one gate structure comprises:

a first gate structure disposed on the first fin structure; and

a second gate structure disposed on the first fin structure, and

wherein the first epitaxial material is disposed between the first gate structure and the second gate structure.

3. The finFET device of claim 1 , wherein the at least one gate structure or the second gate structure comprises a work function material and a low resistance metal disposed on the work function material.

4. The finFET device of claim 1 , wherein the first fin structure further comprises a third portion and a fourth portion adjacent to the third portion, the finFET device further comprising:

a second well region formed in the substrate material and doped with the second type of dopant; and

a second epitaxial material disposed over the fourth portion of the first fin structure and adjacent to the second well region, wherein the second epitaxial material comprises the first type of dopant and is configured to be coupled to a source contact,

wherein:

the oxide material is adjacent to the third portion of the first fin structure, and

the third portion of the first fin structure is doped with the second type of dopant.

5. The finFET device of claim 4 , wherein the second well region is doped lighter than the first epitaxial material.

6. The finFET device of claim 4 , wherein the at least one gate structure comprises a first gate structure disposed on the first fin structure, the finFET device further comprising:

a second gate structure disposed on the first fin structure; and

a third gate structure disposed on the first fin structure,

wherein:

the first epitaxial material is disposed between the first gate structure and the second gate structure, and

the second epitaxial material is disposed between the first gate structure and the third gate structure.

7. The finFET device of claim 1 , wherein the first fin structure further comprises a third portion and a fourth portion adjacent to the third portion, the finFET device further comprising:

a second epitaxial material disposed over the fourth portion of the first fin structure and adjacent to the first well region, wherein the second epitaxial material comprises the first type of dopant and is configured to be coupled to a drain contact,

wherein:

the oxide material is adjacent to the third portion of the first fin structure,

the third portion of the first fin structure is doped with the first type of dopant.

8. The finFET device of claim 1 , further comprising a second fin structure disposed on the top surface of the substrate material, the second fin structure comprising a first portion doped with the first type of dopant and a second portion doped with the second type of dopant, wherein the oxide material is adjacent to the first portion of the second fin structure.

9. The finFET device of claim 8 , wherein the at least one gate structure comprises a first gate structure disposed on the first fin structure and the second fin structure, the finFET device further comprising:

a second epitaxial material disposed over the second portion of the second fin structure, wherein the second epitaxial material comprises the second type of dopant; and

a second gate structure disposed on the first fin structure and the second fin structure,

wherein the first epitaxial material and the second epitaxial material are disposed between the first gate structure and the second gate structure.

10. The finFET device of claim 1 , wherein:

the first type of dopant is an n-type dopant and the second type of dopant is a p-type dopant, and

the first portion is adjacent to the second portion.

11. A fin-based field effect transistor (finFET) device, comprising:

a semiconductor substrate material with a first type of dopant, wherein the semiconductor substrate material has a top surface and a bottom surface;

a first fin structure disposed on the top surface of the semiconductor substrate material;

a first well region formed in a portion of the first fin structure, wherein the first well region comprises a second type of dopant;

a second well region formed in a portion of the first fin structure, wherein the second well region comprises the first type of dopant;

a first epitaxial material disposed over the first well region, wherein the first epitaxial material comprises the first type of dopant; and

a second epitaxial material disposed over a portion of the second well region, wherein the second epitaxial material comprises the second type of dopant.

12. The finFET device of claim 11 , further comprising:

a third epitaxial material disposed over a portion of the first well region,

wherein the third epitaxial material comprises the second type of dopant.

13. The finFET device of claim 12 , wherein:

the second epitaxial material is configured to be coupled to a source contact,

the third epitaxial material is configured to be coupled to a drain contact,

the first well region is doped lighter than at least one of the second epitaxial material or the third epitaxial material, and

the second well region is doped lighter than the first epitaxial material.

14. The finFET device of claim 11 , further comprising an oxide material disposed on the top surface of the semiconductor substrate material, wherein the oxide material is adjacent to at least one of the first well region or the second well region.

15. The finFET device of claim 11 , further comprising:

a second fin structure disposed on the top surface of the semiconductor substrate material; and

an oxide material disposed on the top surface of the semiconductor substrate material, wherein the oxide material is in contact with the first fin structure and the second fin structure.

16. The finFET device of claim 11 , further comprising a plurality of gate structures disposed on the first fin structure, wherein at least one of the plurality of gate structures is disposed on the first well region and at least one of the plurality of gate structures is disposed on the second well region.

17. The finFET device of claim 16 , wherein at least one of the plurality of gate structures comprises a work function material and a low resistance metal disposed on the work function material.

18. A fin-based field effect transistor (finFET) device, comprising:

a substrate material having a top surface and a bottom surface;

a fin structure disposed on the top surface of the substrate material;

a first well region formed in the fin structure, wherein the first well region comprises a first type of dopant;

a first epitaxial material disposed over the first well region, wherein the first epitaxial material comprises a second type of dopant; and

a second epitaxial material disposed over the first well region, wherein the second epitaxial material comprises the first type of dopant.

19. The finFET device of claim 18 , further comprising:

a second well region formed in the fin structure, wherein the second well region comprises the second type of dopant;

a first gate structure disposed over at least a portion of the first well region and at least a portion of the second well region; and

a second gate structure disposed over the first well region.

20. The finFET device of claim 19 , further comprising:

a third epitaxial material disposed over the second well region, wherein the third epitaxial material comprises the first type of dopant.