IP Library Granted Patent US 9,851,732
Granted Patent B2
US 9,851,732 · App. 14/601,127 · Granted Dec 26, 2017

Split power supply bias with kill switch

Inventor: Robert Mark Englekirk (Pacific Palisades, CA)
Assignee: Peregrine Semiconductor Corporation
G05F1/56
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Quick Facts
Patent No.
US 9,851,732
App. No.
14/601,127
Granted
Dec 26, 2017
Kind
B2
Abstract

Methods and systems for electrical bias generation are disclosed. Two or more different voltage levels can be created, one above a mid-rail value and one below the mid-rail value for each pair of voltage levels. Such voltage levels can be used to power processes in other circuits by providing a safe but adequate voltage value. Transition control between an on state and an off state for a power supply can also be implemented using this bias generation.

Claims (37)

1. A method to regulate voltage levels comprising:

creating from a supply voltage an above-ground voltage and a below-Vcc voltage, said above-ground voltage being less than the supply voltage and higher than an average of the supply voltage and a ground voltage level, said below-Vcc voltage being less than the average of the supply voltage and a ground voltage level and higher than the ground voltage level;

providing at least one load connected to the supply voltage, the above-ground voltage, and the below-Vcc voltage, the at least one load having a process voltage limit; and

varying at least one of the above-ground voltage and the below-Vcc voltage, based on at least the process voltage limit.

2. The method of claim 1 , further comprising slewing a rate at which the supply voltage is applied to the at least one load during a turn on operation.

3. The method of claim 1 , further comprising pulling down the at least one load to the ground voltage level during a turn off operation.

4. The method of claim 1 , further comprising slewing a rate at which the supply voltage is applied to the at least one load during a turn on operation and pulling down the at least one load to the ground voltage level during a turn off operation.

5. The method of claim 4 , further comprising controlling, via logic circuits, the slewing and the pulling down.

6. The method of claim 1 , wherein the above-ground voltage and the below-Vcc voltage vary in a non-linear manner with respect to changes in the supply voltage.

7. A device comprising circuitry arranged to perform the method of claim 6 when in operation.

8. A device comprising circuitry arranged to perform the method of claim 1 when in operation.

9. A device to regulate a transition between voltage levels comprising:

a voltage regulator component providing a first voltage and a second voltage, the first voltage having a value between a supply voltage and one half of the supply voltage, and the second voltage having a value between one half of the supply voltage and a ground voltage level;

a slew rate control component controlling a rate of change of an output voltage;

a pull down component to pull down the output voltage;

a first logic component to control the slew rate component; and

a second logic component to control the pull down component.

10. The device of claim 9 , wherein the slew rate control component comprises a plurality of capacitors, resistors and complementary metal-oxide semiconductor (CMOS) transistors.

11. The device of claim 10 , wherein the plurality of capacitors, resistors and CMOS transistors comprises two capacitors and two resistors forming a capacitive feedback path.

12. The device of claim 9 , wherein an input of the first logic component is connected to an output of the second logic component.

13. A device to regulate a transition between voltage levels comprising:

a source voltage input;

a ground voltage connection;

a dual mid-rail voltage supply connected to the source voltage input and the ground voltage connection and outputting a below-source voltage and an above-ground voltage;

a first logic circuit connected to the above-ground voltage and the ground voltage connection and outputting a first logic output and a second logic output, the first logic output being the inverse of the second logic output;

a second logic circuit connected to the source voltage input, the below-source voltage, the above-ground voltage, and the ground voltage connection and outputting a third logic output;

a slew rate control circuit connected to the source voltage, the third logic output, and the below-source voltage and comprising at least two switches; and

a pull-down circuit connected to the second logic output, the ground voltage connection, the above-ground voltage, and the slew rate control circuit.

14. A method to regulate voltage levels comprising:

creating, from a supply voltage, a plurality of voltages including a first, second, third and fourth voltage, said first voltage being less than the supply voltage and higher than two thirds of a difference between the supply voltage and a ground voltage level, said second voltage being less than two thirds of the difference between the supply voltage and the ground voltage level and higher than a third of a difference between the supply voltage and the ground voltage level, said third voltage being less than two thirds of the difference between the supply voltage and the ground voltage level and higher than a third of a difference between the supply voltage and the ground voltage level, said fourth voltage being less than one third of the difference between the supply voltage and the ground voltage level and higher than the ground voltage level;

providing at least one load connected to the supply voltage and at least two of the first, second, third and fourth voltages, the at least one load having a process voltage limit; and

varying at least one of the at least two voltage, based on at least the process voltage limit.

15. The method to regulate voltage levels of claim 14 , wherein the third voltage is lower than the second voltage.

16. A method to regulate voltage levels for a stack connected to a supply voltage, the method comprising:

creating from the supply voltage a plurality of N−1 voltage pairs, where N is the number of devices in the stack, each voltage pair of the plurality of voltage pairs including an upper voltage and a lower voltage, the upper voltage of the nth voltage pair, where n is an integer number that ranges from 1 to N−1, being less than (n+1)/N of the supply voltage and higher than n/N of the supply voltage, and the lower voltage level of the nth voltage level difference being less than n/N of the supply voltage and higher than (n−1)/N of the supply voltage;

providing the plurality of N−1 voltage pairs to the stack; and

varying at least one voltage of the plurality of voltage pairs based on at least a process voltage limit of at least one device of the stack.

Assignments (2)
CHANGE OF NAME Recorded Jan 24, 2018
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 045749/0391 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2015
From: ENGLEKIRK, ROBERT MARK
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 035383/0205 →
Continuity (1)
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