Resistive random access memory structure and method for operating resistive random access memory
A resistive random access memory (RRAM) structure including a first transistor, a second transistor and a RRAM cell string is provided. The first transistor and the second transistor are cascaded by electrically connecting a first terminal of the first transistor and the second transistor. The RRAM cell string includes a plurality of memory cells connected with each other and is electrically connected to a second terminal of the first transistor.
1. A resistive random access memory structure, comprising:
a first transistor and a second transistor, wherein the first transistor and the second transistor are cascaded by electrically connecting a first terminal of the first transistor with the second transistor; and
a resistive random access memory cell string, comprising a plurality of memory cells electrically connected to each other, and electrically connected to a second terminal of the first transistor.
2. The resistive random access memory structure as claimed in claim 1 , wherein the first transistor and the second transistor are cascaded by sharing the first terminal.
3. The resistive random access memory structure as claimed in claim 2 , wherein the first transistor comprises:
a first gate, disposed on a substrate; and
a first doped region and a second doped region, respectively disposed in the substrate at one side and another side of the first gate, and respectively serving as the first terminal and the second terminal; and
the second transistor comprises:
a second gate disposed on the substrate; and
a third doped region and the first doped region, respectively disposed in the substrate at one side and another side of the second gate, wherein the third doped region serves as a third terminal.
4. The resistive random access memory structure as claimed in claim 3 , wherein the substrate comprises a protruding portion, the protruding portion is located between the first gate and the second gate, and the first terminal is located in the protruding portion.
5. The resistive random access memory structure as claimed in claim 1 , wherein the first transistor and the second transistor are cascaded by electrically connecting the first terminal of the first transistor and a fourth terminal of the second transistor.
6. The resistive random access memory structure as claimed in claim 5 , wherein the first transistor comprises:
a first gate, disposed on a substrate; and
a first doped region and a second doped region, respectively disposed in the substrate at one side and another side of the first gate, and respectively serving as the first terminal and the second terminal; and
the second transistor comprises:
a second gate disposed on the substrate; and
a third doped region and a fourth doped region, respectively disposed in the substrate at one side and another side of the second gate, and respectively serving as a third terminal and a fourth terminal.
7. The resistive random access memory structure as claimed in claim 6 , wherein the first doped region and the fourth doped region are electrically connected through an interconnect structure.
8. The resistive random access memory structure as claimed in claim 1 , wherein each of the memory cells comprises:
a first electrode;
a second electrode, disposed on a first electrode; and
a variable resistance structure, disposed between the first electrode and the second electrode.
9. The resistive random access memory structure as claimed in claim 8 , wherein the resistive random access memory cell string further comprises an interconnect structure connecting the first electrodes of the memory cells of the same string.
10. The resistive random access memory structure as claimed in claim 1 , wherein the first transistor and the second transistor respectively comprise a metal oxide semiconductor field effect transistor, a bipolar junction transistor, a junction field effect transistor, a metal-semiconductor field effect transistor, or a modulation doped field effect transistor.