Optical device structure using GaN substrates and growth structures for laser applications

1. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation, the {30-31} crystalline orientation being selected from either (30-31) or (30-3-1);

an active region overlying a portion of the gallium and nitrogen containing surface;

a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and

a second facet provided on the second end of the laser stripe region, the second facet being substantially orthogonal to the laser stripe region,

wherein the {30-31} crystalline orientation is off-cut less than +/−3 degrees toward or away from a c-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

2. A device comprising:

a gallium and nitrogen containing surface having a {30-31} crystalline orientation;

an active region formed overlying a portion of the gallium and nitrogen containing surface;

a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;

a first semipolar surface facet provided on the first end of the laser stripe region; and

a second semipolar surface facet provided on the second end of the laser stripe region;

wherein the optical device comprises one or more cladding layers that are substantially aluminum-free, and the {30-31} crystalline orientation is off-cut less than +/−3 degrees toward or away from a c-plane.

3. The device of claim 2 wherein the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

4. The device of claim 3 wherein each of the one or more cladding layers comprises less than about 2% mole fraction of AlN.

5. The device of claim 3 further comprising an n-type metal region overlying a backside of the gallium and nitrogen containing surface and a p-type metal region overlying an upper portion of the laser stripe region.

6. The device of claim 3 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.

7. The device of claim 3 wherein each of the first semipolar surface facet and the second semipolar surface facet is provided by a scribing process and a breaking process, and wherein the scribing process is performed with a laser using a top-side skip-scribe process.

8. The device of claim 3 wherein the active region comprises three to seven quantum well regions.