Semiconductor device
View Patent ↗A semiconductor device includes a fuse element that can be cut and removed by laser irradiation. The fuse element has a large width portion having a large sectional area to be irradiated with a laser spot, and two small width portions having a small sectional area connected to opposite sides of the large width portion. Penetration of moisture is suppressed even after cutting of the fuse element since the large width portion is removed by the laser irradiation and only the small width portions having the small sectional area remain as exposed cut surfaces.
1. A semiconductor device, comprising a fuse element for laser cutting,
the fuse element being arranged on an insulating film formed on a silicon substrate and being covered by a protective insulating film,
the fuse element comprising:
a large sectional area region having opposed sides; and
small sectional area regions each connected to and adjacent to one of the sides of the large sectional area region so that the large sectional area region is connected between the small sectional area regions,
the large sectional area region comprising a thick portion, and each of the small sectional area regions comprising a thin portion, the thick portion being thicker than the thin portion, and
the large sectional area region being configured to be irradiated with a laser when laser cutting the fuse element to remove the large sectional area region and expose cut surfaces of the small sectional areas regions.
2. The semiconductor device according to claim 1 wherein the thick portion is formed in a trench formed in the insulating film.
3. The semiconductor device according to claim 2 , wherein a width of the trench is equal to or less than twice the thickness of the thin portion.
4. A semiconductor device comprising:
an insulating film disposed on a silicon substrate;
a fuse element arranged on the insulating film, the fuse element having two spaced-apart terminals, a large sectional area region, and two small sectional area regions connecting the large sectional area region to respective ones of the terminals; and
a protective insulating film formed over the insulating film and covering the fuse element, wherein
the large sectional area region comprises a thick portion and each of the small sectional area regions comprises a thin portion, and the thick portion is thicker than the thin portion, and
the large sectional area region is configured to be cut by laser irradiation that removes both the irradiated portion of the protective insulating film covering the large sectional area region and the large sectional area region thereby exposing cut surfaces of the small sectional area regions.
5. The semiconductor device according to claim 4 ; wherein the thick portion is formed in a trench formed in the insulating film.
6. The semiconductor device according to claim 5 ; wherein a width of the trench is equal to or less than twice the thickness of the thin portion.
7. The semiconductor device according to claim 4 ; wherein the fuse element comprises a plurality of fuse elements arranged side by side on the insulating film.