LED device with improved thermal performance
View Patent ↗An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.
1. A method of packaging light-emitting diodes (LEDs), comprising:
forming a plurality of openings in a wafer;
forming a conductor on the wafer; and
coupling a plurality of LEDs to the conductor,
wherein a top surface of the LEDs are not co-planar with a top surface of the conductor.
2. The method of claim 1 , wherein the wafer contains at least one of: ceramic, silicon, plastic, or an organic material.
3. The method of claim 1 , wherein the conductor is formed on a top side of the wafer and a bottom side of the wafer opposite the front side.
4. The method of claim 1 , wherein a portion of the conductor is a via that vertically extends from a top side of the wafer to a bottom side of the wafer.
5. The method of claim 1 , wherein the coupling comprises inserting the LEDs in the openings, respectively.
6. The method of claim 1 , wherein the LEDs are free of a sapphire substrate.
7. The method of claim 1 , wherein the LEDs are each attached to a respective conductive structure via bottom surfaces of the LEDs.
8. The method of claim 7 , wherein the respective conductive structure includes a metal core and a base that is wider than the metal core.
9. The method of claim 8 , wherein the base includes one of: a metal, material, a doped silicon material, or a silicon layer disposed between two dielectric layers, the two dielectric layers being further disposed between two metal layers.
10. The method of claim 9 , wherein the base is wider than each of the openings such that the base becomes electrically coupled to a portion of the conductor when the respective LED is inserted into the respective opening.
11. The method of claim 1 , further comprising: attaching a bond wire to the conductor and each of the LEDs.
12. The method of claim 1 , further comprising: forming an isolation material over a top side of the wafer, wherein the forming of the isolation material is performed such that:
the isolation material partially fills in the openings; and
portions of the isolation material disposed over the LEDs are molded into lenses.
13. A method of packaging light-emitting diodes (LEDs), comprising:
forming a plurality of openings in a wafer, wherein the wafer contains at least one of:
ceramic, silicon, plastic, or an organic material;
forming a conductor on a top side and a bottom side of the wafer; and
coupling a plurality of LEDs to the conductor at least in part by inserting the LEDs through the openings, respectively,
wherein a top surface of the LEDs are not co-planar with a top surface of the conductor.
14. The method of claim 13 , wherein:
the LEDs are free of a sapphire substrate and are each attached to a respective conductive structure via bottom surfaces of the LEDs; and
the conductive structure includes a metal core and a base that is wider than the metal core and wider than each of the openings.
15. The method of claim 14 , wherein the base includes one of: a metal material, a doped silicon material, or a silicon layer disposed between two dielectric layers, the two dielectric layers being further disposed between two metal layers.
16. The method of claim 13 , further comprising:
attaching a bond wire to the conductor and each of the LEDs; and
forming an isolation material over a top side of the wafer, wherein the forming of the isolation material is performed such that:
the isolation material partially fills in the openings; and
portions of the isolation material disposed over the LEDs are molded into lenses.
17. The method of claim 13 , wherein a portion of the conductor is a through-substrate-via (TSV) that vertically extends from a top side of the wafer to a bottom side of the wafer.
18. A method of packaging light-emitting diodes (LEDs), comprising:
forming a plurality of openings in a wafer, wherein the wafer contains at least one of:
ceramic, silicon, plastic, or au organic material;
forming a conductor on a top side and a bottom side of the wafer; and
inserting a plurality of LED-containing structures through the plurality of openings, respectively, wherein the LED-containing structures each include an LED attached to a conductive structure via bottom surfaces of the LEDs, and wherein the conductive structure includes a metal core and a base that is wider than the metal core and wider than each of the plurality of openings;
electrically coupling the LEDs to the conductor; and
forming an isolation material over a top side of the wafer,
wherein the forming of the isolation material is performed such that: the isolation material partially fills in the plurality of openings, and portions of the isolation material disposed over the LEDs are molded into lenses.
19. The method of claim 18 , wherein the base includes one of a metal material, a doped silicon material, or a silicon layer disposed between two dielectric layers, the two dielectric layers being further disposed between two metal layers.
20. The method of claim 18 , wherein a portion of the conductor is a through-substrate-via (TSV) that vertically extends from a top side of the wafer to a bottom side of the wafer.