HIGH ENERGY MATERIALS FOR A BATTERY AND METHODS FOR MAKING AND USE
A method of forming an electrode active material by reacting a metal fluoride and a reactant. The method includes a coating step and a comparatively low temperature annealing step. Also included is the electrode formed following the method.
1 . A method of making an electrode, comprising:
coating particles, wherein each particle includes a metal fluoride material, with a coating precursor material, wherein the coating precursor material includes a transition metal;
annealing the particles such that at least a portion of the metal fluoride material and at least a portion of the transition metal react to undergo a phase change; and
forming the coated particles into an electrode.
2 . The method of claim 1 , wherein the electrode forming step comprises preparing a formulation composition of coated particles, binder, and conductive additive.
3 . The method of claim 1 , wherein the metal fluoride material comprises copper fluoride.
4 . The method of claim 1 , wherein the coating step comprising milling the particles with the coating precursor material.
5 . The method of claim 4 , wherein the coating precursor material comprises a organo-metal complex.
6 . The method of claim 4 , wherein the coating precursor material comprises a metal oxide.
7 . The method of claim 4 , wherein the coating precursor material comprises elemental metal.
8 . The method of claim 4 , wherein the coating precursor material comprises NiO.
9 . The method of claim 4 , wherein the coating precursor material comprises TiO 2 .
10 . The method of claim 4 , wherein the coating precursor material is Ni.
11 . The method of claim 4 , wherein the coating precursor material comprises nickel(II) acetylacetonate.
12 . The method of claim 4 , wherein the coating precursor material comprises nickel acetate.
13 . The method of claim 1 , wherein the coating step comprises a solution coating process.
14 . The method of claim 13 , wherein the coating precursor material comprises an organo-metal complex.
15 . The method of claim 13 , wherein the coating precursor material comprises nickel(II) acetylacetonate.
16 . The method of claim 1 , wherein the coating step comprises a physical vapor deposition process.
17 . The method of claim 16 , wherein the coating precursor material comprises a metal oxide.
18 . The method of claim 16 , wherein the coating precursor material comprises a metal nitride.
19 . The method of claim 16 , wherein the coating precursor material comprises a metal silicate.
20 . The method of claim 16 , wherein the coating precursor material is Ni or Ti.
21 . The method of claim 1 , wherein the coating step comprises an atomic layer deposition process.
22 . The method of claim 21 , wherein the coating precursor material is Ni.
23 . The method of claim 21 , wherein the coating precursor material comprises a metal oxide.
24 . The method of claim 21 , wherein the coating precursor material comprises a metal nitride.
25 . The method of claim 1 , wherein the annealing step is conducted at a temperature less than or equal to 450 degrees C.
26 . The method of claim 1 , wherein the annealing step is conducted at a temperature less than or equal to 325 degrees C.
27 . An electrode formed by the method of claim 1 .
28 . The electrode of claim 27 wherein the electrode is characterized by having reversible capacity.
29 . The electrode of claim 27 comprising particles having a first phase and a coating on the particle having a second phase.
30 . The electrode of claim 29 wherein the coating is covalently bonded to the particle