EXPOSURE METHOD, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, an exposure method is disclosed. The method includes irradiating a first light and a second light on a mask including a plurality of light transmitting portions arranged in a periodic pattern. The first light has a peak of intensity at a first wavelength. The second light has a peak of intensity at a second wavelength. The first wavelength is shorter than a distance between the mask and a substrate disposed to be separated from the mask. The second wavelength is longer than the first wavelength. The method includes irradiating a first interference light transmitted through the light transmitting portions and a second interference light transmitted through the light transmitting portions on the substrate.
1 . An exposure method, comprising:
irradiating a first light and a second light on a mask including a plurality of light transmitting portions arranged in a periodic pattern, the first light having a peak of intensity at a first wavelength, the second light having a peak of intensity at a second wavelength, the first wavelength being shorter than a distance between the mask and a substrate disposed to be separated from the mask, the second wavelength being longer than the first wavelength; and
irradiating a first interference light transmitted through the light transmitting portions and a second interference light transmitted through the light transmitting portions on the substrate.
2 . The method according to claim 1 , wherein
a region where the first interference light and the second interference light are irradiated on the substrate has periodicity corresponding to the periodic pattern, and
the period of the region is not more than 10 times the first wavelength.
3 . The method according to claim 2 , wherein the first interference light and the second interference light are produced by Talbot interference.
4 . The method according to claim 3 , wherein the region includes a pattern formed of a self-image of the first interference light and a pattern formed of a reversed image of the first interference light.
5 . The method according to claim 1 , wherein the ratio of an intensity of the first light and an intensity of the second light is modifiable.
6 . The method according to claim 1 , wherein the plurality of light transmitting portions is provided on a plane parallel to a surface of the substrate where the first interference light is irradiated.
7 . The method according to claim 6 , wherein each of the plurality of light transmitting portions extends in a first direction in the plane and is arranged in a second direction in the plane, the second direction intersecting the first direction.
8 . The method according to claim 1 , wherein a light source of the first light includes at least one selected from an ArF excimer laser and a KrF excimer laser.
9 . The method according to claim 1 , wherein
a light source of the first light is a mercury lamp, and
the first light includes at least one selected from an i-line, a g-line, and a h-line.
10 . The method according to claim 1 , further including:
irradiating a third light on the mask, the third light having a peak of intensity at a third wavelength longer than the first wavelength; and
irradiating a third interference light on the substrate, the third interference light being produced by the third light passing through the light transmitting portions.
11 . An exposure apparatus, comprising:
a light source emitting
a first light having a peak of intensity at a first wavelength, and
a second light having a peak of intensity at a second wavelength, the second wavelength being longer than the first wavelength;
a stage, a substrate being placed on the stage; and
a mask holder holding a mask at a position where a distance between the mask and the substrate is longer than the first wavelength, the mask including a plurality of light transmitting portions disposed in a periodic pattern,
a first interference light and a second interference light being irradiated on the substrate, the first interference light being transmitted through the light transmitting portions by irradiating the first light on the mask, the second interference light being transmitted through the light transmitting portions by irradiating the second light on the mask.
12 . The apparatus according to claim 11 , wherein
a region of the substrate where the first interference light and the second interference light are irradiated has periodicity corresponding to the periodic pattern, and
the period of the region is not more than 10 times the first wavelength.
13 . The apparatus according to claim 12 , wherein the first interference light and the second interference light are produced by Talbot interference.
14 . The apparatus according to claim 13 , wherein the region includes a pattern formed of a self-image of the first interference light and a pattern formed of a reversed image of the first interference light.
15 . The apparatus according to claim 11 , wherein the ratio of an intensity of the first light and an intensity of the second light is modifiable.
16 . The apparatus according to claim 11 , wherein the plurality of light transmitting portions is provided on a plane parallel to a surface of the substrate where the first interference light is irradiated.
17 . The apparatus according to claim 11 , wherein the light source includes at least one selected from an ArF excimer laser and a KrF excimer laser.
18 . The apparatus according to claim 11 , wherein
the light source is a mercury lamp, and
the first light includes at least one selected from an i-line, a g-line, and a h-line.
19 . The apparatus according to claim 11 , wherein
the light source also emits a third light having a peak of intensity at a third wavelength, the third wavelength being longer than the first wavelength, and
a third interference light also is irradiated on the substrate by irradiating the third light on the mask, the third interference light being produced by the third light passing through the light transmitting portions.
20 . A method for manufacturing a semiconductor device, comprising:
irradiating a first light and a second light on a mask including a plurality of light transmitting portions disposed in a periodic pattern, the first light having a peak of intensity at a first wavelength, the second light having a peak of intensity at a second wavelength, the first wavelength being shorter than a distance between the mask and a substrate disposed to be separated from the mask, the second wavelength being longer than the first wavelength;
irradiating a first interference light and a second interference light on the substrate, the first interference light being produced by the first light passing through the light transmitting portions, the second interference light being produced by the second light passing through the light transmitting portions; and
forming a pattern on the substrate, the pattern corresponding to a region on the substrate where the first interference light and the second interference light are irradiated.