IP Library Granted Patent US 9,490,040
Granted Patent B2
US 9,490,040 · App. 14/605,738 · Granted Nov 8, 2016

Graphene for semiconductor co-doping boron and nitrogen at the same time and preparation method thereof

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,490,040
App. No.
14/605,738
Granted
Nov 8, 2016
Kind
B2
Abstract

Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.

Claims (7)

1. A method of producing doped graphene for semiconductor applications, comprising

1) adding a carbon halide precursor and an alkali metal or alkaline earth metal to a closed container,

2) adding a boron precursor and a nitrogen precursor to the closed container, and

3) raising the internal temperature of the closed container to 50° C. to 400° C. and maintaining the temperature within the closed container, wherein the carbon halide precursor is selected from the group consisting of CF 4 , C 2 F 4 , CF 6 , CCl 4 , C 2 Cl 4 , CCl 6 , C 6 Cl 6 , CBr 4 , C 2 Br 4 , C 6 Br 6 , CI 4 , C 2 I 4 , C 6 I 6 , and mixtures thereof, the boron precursor is selected from the group consisting of BF, BF 3 , BCl 3 , BBr 3 , BI 3 , and mixtures thereof, wherein the nitrogen precursor is selected from the group consisting of N 2 , NH 3 , NF 3 , NCl, NBr 3 , NI 3 , NHCl 2 , NH 2 Cl, NF 5 , N 2 F 4 , N 2 Cl 4 , and mixtures thereof, wherein 0.01% to 5.00% of the boron precursor and 0.01% to 5.00% of nitrogen precursor are co-doped into graphene.

2. The method according to claim 1 , wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in amounts of 0.01 to 20% by volume.

3. The method according to claim 1 , wherein, in step 3), the internal temperature of the closed container is maintained for 0.5 to 12 hours.

4. The method according to claim 1 , wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a total amount of 10 to 30% by volume, based on the volume of the closed container.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2016
From: ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY
To: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Reel/Frame 038238/0905 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2016
From: UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION
To: ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 037771/0590 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2015
From: BAEK, JONG-BEOM; JUNG, SUN-MIN; JEON, IN-YUP
To: UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION
Reel/Frame 034819/0685 →