IP Library Granted Patent US 9,423,473
Granted Patent B2
US 9,423,473 · App. 14/606,909 · Granted Aug 23, 2016

Three axis magnetic sensor device and method using flex cables

Inventors: Hong Wan (Plymouth, MN); Anthony F. Flannery (Los Gatos, CA)
Assignee: MCUBE INC.
G01R33/093G01R33/0206G01R33/096G01R33/098
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Quick Facts
Patent No.
US 9,423,473
App. No.
14/606,909
Granted
Aug 23, 2016
Kind
B2
Abstract

A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

Claims (49)

1. A device for sensing magnetic fields, the device comprising:

a first substrate member having a first surface region and a second surface region

a first integrated circuit (IC) layer spatially disposed overlying at least a portion of the first surface region of the first substrate member, the first IC layer having one or more bond pads;

a first magnetic field sensor element operably coupled to the first IC layer, the first magnetic field sensor element being configured to sense magnetic fields in a first spatial direction;

a second magnetic field sensor element operably coupled to the first IC layer, the second magnetic field sensing element being configured to sense magnetic fields in a second direction;

a second substrate member coupled to the first substrate member, the second substrate member having a first surface region and a second surface region, the second surface region of the second substrate member being coupled to the second surface region of the first substrate member;

a second IC layer spatially disposed overlying at least a portion of the first surface region of the second substrate member, the second IC layer having one or more bond pads;

a third magnetic field sensor element operably coupled to the second IC layer, the third magnetic sensing element being configured to sense magnetic fields in a third spatial direction; and

one or more conductive elements electrically coupling the first IC layer and the second IC layer, the one or more conductive elements being coupled to the bond pad of the first IC layer and the bond pad of the second IC layer.

2. The device of claim 1 wherein the one or more conductive elements are selected from a group of materials consisting of: metals or metal alloys.

3. The device of claim 1 wherein the first substrate member and the second substrate member both comprise materials from a monolithic silicon substrate.

4. The device of claim 1 wherein the one or more conductive elements comprise a passivation or parylene material.

5. The device of claim 1 wherein the second surface region of the second substrate member is coupled to the second surface region of the first substrate member via a material selected from a group consisting of: an adhesive material, a glue material.

6. The device of claim 1

wherein the first, second, and third magnetic field sensor elements are devices selected from a group consisting of: anisotropic magneto-resistive (AMR) devices, giant magneto-resistive (GMR) devices, or tunnel junction magneto-resistive (TMR) devices, and

wherein the first spatial direction, the second spatial direction and the third spatial direction are orthogonal.

7. The device of claim 1 wherein the first magnetic field sensor element is configured to detect magnetic fields in the first spatial direction via being disposed in a first spatial orientation overlying the first surface region, the second magnetic field sensor element is configured to detect magnetic fields in the second spatial direction via being disposed in a second spatial orientation overlying the first surface region, and the third magnetic field sensor element is configured to detect magnetic fields in the third spatial direction via a vertically mounted orientation.

8. The device of claim 1

wherein the first surface region of the first substrate member comprises a horizontal surface and wherein the second surface region of the first substrate member comprises a vertical surface; and

wherein the first surface region of the second substrate member comprises a top surface and wherein the second surface region of the second substrate member comprises a bottom surface.

9. A device for sensing magnetic fields, the device comprising:

a substrate member having a first surface region and a second surface region;

a first insulation material spatially disposed overlying the first surface region of the substrate, the first insulation material having a surface region;

a first integrated circuit (IC) layer spatially disposed overlying at least a portion of the surface region of the first insulation material, the first IC layer having one or more bond pads;

a first magnetic field sensor element operably coupled to the first IC layer, the first magnetic field sensor element being configured to detect at least in a first direction;

a second magnetic field sensor element operably coupled to the first IC layer, the second magnetic field sensing element being configured to detect at least in a second direction;

a second insulation material coupled the substrate member, the second insulation material having a first surface region and a second surface region, the second surface region of the second insulation material being coupled to the second surface region of the substrate member;

a second IC layer spatially disposed overlying at least a portion of the first surface region of the second insulator material, the second IC layer having one or more bond pads;

a third magnetic field sensor element operably coupled to the second IC layer, the third magnetic sensing element being configured to detect at least in a third direction; and

one or more conductive cables electrically coupling the first IC layer and the second IC layer, the one or more conductive cables being coupled to at least one of the bond pad(s) of the first IC layer and at least one of the bond pad(s) from the second IC layer.

10. The device of claim 9 wherein the one or more conductive cables comprises metals or metal alloys.

11. The device of claim 9 wherein the one or more conductive cables is coated with a passivation material or a parylene material.

12. The device of claim 9 wherein the substrate member, the first insulation material, and the second insulation material comprise materials from a monolithic silicon-on-insulator member.

13. The device of claim 9 wherein the second surface region of the second insulation material is coupled to the second surface region of the substrate member via a material selected from a group consisting of: an adhesive material, a glue material.

14. The device of claim 9 wherein the first, second, and third magnetic field sensor elements are devices selected from a group consisting of: comprise anisotropic magneto-resistive (AMR) devices, giant magneto-resistive (GMR) devices, or tunnel-junction magneto-resistive (TMR) devices.

15. The device of claim 9 wherein the first magnetic field sensor element is configured to detect magnetic fields in the first spatial direction via being disposed in a first spatial orientation overlying the first surface region, the second magnetic field sensor element is configured to detect magnetic fields in the second spatial direction via being disposed in a second spatial orientation overlying the first surface region, and the third magnetic field sensor element is configured to detect magnetic fields in the third spatial direction via a vertically mounted orientation.

16. The device of claim 9

wherein the first surface region of the substrate member comprises a horizontal surface and wherein the second surface region of the substrate member comprises a vertical surface; and

wherein the first surface region of the second insulation material comprises a top surface and wherein the second surface region of the second insulation material comprises a bottom surface.

17. A device for sensing magnetic fields, the device comprising:

a first substrate member having a first surface region and a second surface region, the second surface region being perpendicular to the first surface region;

a first integrated circuit (IC) layer spatially disposed on at least a portion of the first surface region of the first substrate member, the first IC layer having one or more bond pads;

a first magnetic field sensor element disposed on the first surface region of the first substrate member and operably coupled to the first IC layer, the first magnetic field sensor element being configured to sense magnetic fields in a first spatial direction;

a second magnetic field sensor element operably coupled to the first IC layer, the second magnetic field sensing element being configured to sense magnetic fields in a second direction;

a second substrate member coupled to the first substrate member, the second substrate member having a first surface region and a second surface region, the second surface region being parallel to the first surface region, the second surface region of the second substrate member being coupled to the second surface region of the first substrate member, such that the first surface of the second substrate member is perpendicular to the first surface of the first substrate member;

a second IC layer spatially disposed overlying at least a portion of the first surface region of the second substrate member, the second IC layer having one or more bond pads;

a third magnetic field sensor element disposed on the first surface region of the second substrate member and operably coupled to the second IC layer, the third magnetic sensing element being configured to sense magnetic fields in a third spatial direction; and

one or more conductive elements electrically coupling the first IC layer and the second IC layer, the one or more conductive elements being coupled to the bond pad of the first IC layer and the bond pad of the second IC layer.

18. The device of claim 17 wherein the axis of the third magnetic field sensor element is perpendicular to the axis of the first magnetic field sensor element and the axis of third magnetic field sensor element.

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2026
From: MOVELLA INC.
To: PACIFIC RESEARCH GROUP PTE. LTD.
Reel/Frame 075352/0224 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Nov 15, 2022
From: MOVELLA INC.
To: WILMINGTON SAVINGS FUND SOCIETY, FSB, AS AGENT
Reel/Frame 061948/0764 →
RELEASE OF SECURITY INTEREST Recorded Nov 15, 2022
From: EASTWARD FUND MANAGEMENT, LLC
To: MOVELLA INC. (FORMERLY KNOWN AS MCUBE, INC.)
Reel/Frame 061940/0635 →
RELEASE OF SECURITY INTEREST Recorded Nov 15, 2022
From: EASTWARD FUND MANAGEMENT, LLC
To: MOVELLA INC.
Reel/Frame 061940/0602 →
RELEASE OF SECURITY INTEREST Recorded Nov 14, 2022
From: SILICON VALLEY BANK
To: MOVELLA INC. (FORMERLY KNOWN AS MCUBE, INC.)
Reel/Frame 061936/0024 →
CHANGE OF NAME Recorded Oct 31, 2022
From: MCUBE, INC.
To: MOVELLA INC.
Reel/Frame 061601/0085 →
SECURITY INTEREST Recorded Dec 16, 2021
From: MOVELLA INC.
To: EASTWARD FUND MANAGEMENT, LLC
Reel/Frame 058520/0690 →
SECURITY INTEREST Recorded Sep 2, 2020
From: MCUBE, INC.
To: EASTWARD FUND MANAGEMENT, LLC
Reel/Frame 053826/0626 →
SECURITY INTEREST Recorded Jun 11, 2020
From: MCUBE, INC.
To: SILICON VALLEY BANK
Reel/Frame 052909/0119 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2015
From: WAN, HONG; FLANNERY, ANTHONY F., JR.
To: MCUBE INC.
Reel/Frame 035044/0264 →
Continuity (2)
Division 13211305 · Aug 17, 2011
Related Publication 20150137806A1 · May 21, 2015