PACKAGED DEVICE WITH ACOUSTIC RESONATOR AND ELECTRONIC CIRCUITRY AND METHOD OF MAKING THE SAME

1 . A packaged device comprising:

a base substrate having a peripheral pad provided thereon;

a first acoustic resonator disposed on the base substrate;

a lid substrate having a peripheral pad seal provided thereon, the peripheral pad seal bonding with the peripheral pad to define a sealed volume between the lid substrate and the base substrate;

a material layer region provided on a portion of a first surface of the lid substrate within the sealed volume; and

electronic circuitry disposed over the material layer region provided on the portion of the first surface of the lid substrate.

2 . A packaged device as recited in claim 1 wherein the electronic circuitry formed on the material layer region provided on the portion of the first surface of the lid substrate is electrically connected with the first acoustic resonator.

3 . A packaged device as recited in claim 1 wherein: the base substrate has a first bonding pad provided thereon; and the peripheral pad encompasses the first bonding pad.

4 . A packaged device as recited in claim 3 wherein: the lid substrate has a bonding pad seal; and the bonding pad seal is bonded around the perimeter of the first bonding pad.

5 . A packaged device as recited in claim 3 wherein:

the lid substrate defines a through hole therein positioned over the first bonding pad; and the through hole provides access for an electrical connection to the first bonding pad.

6 . A packaged device as recited in claim 3 wherein:

the base substrate defines a through hole therein positioned beneath the bonding pad; and

the through hole provides access for an electrical connection to the bonding pad.

7 . A packaged device as recited in claim 3 wherein the material layer region provided on the portion of the first surface of the lid substrate within the sealed volume is electrically isolated from the bonding pad seal.

8 . A packaged device as recited in claim 1 wherein the material layer region provided on the portion of the first surface of the lid substrate within the sealed volume comprises a material having a substantially lower resistivity than the lid substrate.

9 . The packaged device of claim 1 wherein the first acoustic resonator is laterally offset with respect to the electronic circuitry.

10 . The packaged device of claim 1 wherein the base substrate includes a first surface disposed opposite the first surface of the lid substrate, the first surface of the base substrate including at least a first recessed region disposed beneath the first acoustic resonator, and including at least a second recessed region disposed opposite the electronic circuitry.

11 . The packaged device of claim 1 wherein the electronic circuitry is disposed directly opposite and confronting the first acoustic resonator.

12 . The packaged device of claim 1 wherein the lid substrate is a cap semiconductor substrate, and the material layer region is an epitaxial layer region formed on the cap semiconductor substrate.

13 . The packaged device of claim 1 further comprising a second acoustic resonator.

14 . The packaged device of claim 13 , wherein the first acoustic resonator, or the second acoustic resonator, or both, is a surface acoustic wave resonator (SAW).

15 . The packaged device of claim 13 , wherein the first acoustic resonator, or the second acoustic resonator, or both, is a film bulk acoustic resonator (FBAR).

16 . The packaged device of claim 13 , wherein the first acoustic resonator, or the second acoustic resonator, or both, is a zero drift resonator (ZDR).

17 . A packaged device as recited in claim 1 wherein the electronic circuitry is coupled with the first acoustic resonator to provide an ultra low phase noise oscillator.

18 . A packaged device comprising:

a base substrate having a peripheral pad provided thereon;

a lid substrate having a peripheral pad seal provided thereon, the peripheral pad seal bonding with the peripheral pad to define a sealed volume between the lid substrate and the base substrate;

a material layer region provided on a portion of a first surface of the lid substrate within the sealed volume, wherein the first surface of the lid substrate includes a pedestal; and

first and second acoustic resonators, wherein one of the first and second acoustic resonators is disposed on the base substrate.

19 . A packaged device as recited in claim 18 , wherein an other one of the first and second acoustic resonators is disposed on the lid substrate.

20 . A packaged device as recited in claim 18 wherein:

the first acoustic resonator forms a portion of a reference oscillator;

the second acoustic resonator forms a portion of a second oscillator configured for coupling with a detector; and

differential circuitry is coupled with the reference oscillator and the second oscillator.

21 . A packaged device comprising:

a base substrate having a peripheral pad provided thereon;

a lid substrate having a peripheral pad seal provided thereon, the peripheral pad seal bonding with the peripheral pad to define a sealed volume between the lid substrate and the base substrate;

a first acoustic resonator; and

a temperature compensated oscillator comprising electronic circuitry coupled with the first acoustic resonator.

22 . A packaged device as recited in claim 21 wherein the first acoustic resonator comprises:

a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a second electrically conductive layer disposed over the first electrically conductive layer; and a buried temperature compensating layer provided between the first and second electrically conductive layers;

a piezoelectric layer disposed over the composite first electrode, the piezoelectric layer having a negative temperature coefficient; and

a second electrode disposed over the piezoelectric layer, wherein

the buried temperature compensating layer has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.