Semiconductor device and method for fabricating semiconductor device
A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.
1. A semiconductor device comprising:
a plurality of wires arranged above a semiconductor substrate so as to extend in a first direction with a plurality of first cavities formed between the plurality of wires;
a first dielectric film having a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the plurality of first cavities, the second cavity being arranged above the plurality of first cavities; and
a second dielectric film formed above the first dielectric film so as to cover the second cavity,
wherein a width of the second cavity between the plurality of portions of the first dielectric film is half a pitch of the plurality of portions or less.
2. The device according to claim 1 , wherein the first and second cavities are formed in a memory cell region and a sense amplifier region.
3. The device according to claim 1 , wherein one of silicon nitride and silicon oxide is used as a material of the first dielectric film.
4. The device according to claim 1 , wherein the semiconductor device is a memory device with a floating gate structure and
the plurality of wires are bit lines of the memory device.
5. The device according to claim 4 , wherein the plurality of portions of the first dielectric film extends in a same direction as word lines of the memory device.
6. The device according to claim 1 , wherein the width of the second cavity between the plurality of portions of the first dielectric film is half a pitch of the plurality of wires or less.
7. The device according to claim 1 , wherein a width, along the first direction, of the plurality of portions of the first dielectric film is three times a width of the plurality of wires or less.
8. The device according to claim 1 , wherein a first layer having the first dielectric film and in which the second cavity is formed is arranged above a second layer having the plurality of wires and in which the plurality of first cavities is formed.
9. The device according to claim 1 , wherein the plurality of portions of the first dielectric film are arranged above the plurality of wires and the plurality of first cavities between the plurality of wires.
10. A semiconductor device comprising:
a plurality of wires arranged above a semiconductor substrate so as to extend in a first direction with a plurality of first cavities formed between the plurality of wires;
a first dielectric film having a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the plurality of first cavities, the second cavity being arranged above the plurality of first cavities; and
a second dielectric film formed above the first dielectric film so as to cover the second cavity,
wherein a width, along the first direction, of the plurality of portions of the first dielectric film is three times a width of the plurality of wires or less.
11. The device according to claim 10 , wherein the first and second cavities are formed in a memory cell region and a sense amplifier region.
12. The device according to claim 10 , wherein one of silicon nitride and silicon oxide is used as a material of the first dielectric film.
13. The device according to claim 10 , wherein the semiconductor device is a memory device with a floating gate structure and
the plurality of wires are bit lines of the memory device.
14. The device according to claim 13 , wherein the plurality of portions of the first dielectric film extends in a same direction as word lines of the memory device.
15. The device according to claim 10 , wherein a first layer having the first dielectric film and in which the second cavity is formed is arranged above a second layer having the plurality of wires and in which the plurality of first cavities is formed.
16. The device according to claim 10 , wherein the plurality of portions of the first dielectric film are arranged above the plurality of wires and the plurality of first cavities between the plurality of wires.