Granted Patent B2

US 9,570,274 · App. 14/607,997 · Granted Feb 14, 2017

Inventors: Shankar Swaminathan (Beaverton, OR); Jon Henri (West Linn, OR); Dennis Hausmann (Lake Oswego, OR); Pramod Subramonium (Beaverton, OR); Mandyam Sriram (San Jose, CA); Vishwanathan Rangarajan (Fremont, CA); Kirthi Kattige (Portland, OR); Bart van Schravendijk (Palo Alto, CA); Andrew J. McKerrow (Lake Oswego, OR)

Assignee: Novellus Systems, Inc.

H01J37/32412C23C16/045C23C16/345C23C16/401C23C16/402C23C16/4408C23C16/4554C23C16/45523C23C16/45544C23C16/52C23C16/56H01L21/0217H01L21/02129H01L21/02164H01L21/02274H01L21/02348H01L21/67017H01L21/76831H01L21/76898H01J2237/3321H01J2237/3365

Abstract

Claims (14)

1. A method of depositing a film on a non-planar substrate surface in a reaction chamber, the method comprising:

introducing a first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;

introducing a dopant containing material into the reaction chamber under non-plasma conditions; and

subsequently exposing the non-planar substrate surface to plasma to form a doped film conformal to the non-planar substrate surface.

2. The method of claim 1 , wherein the first reactant is a silicon-containing reactant.

3. The method of claim 1 , wherein the dopant is selected from the group consisting of boron, phosphorous, arsenic, and gallium.

4. The method of claim 1 , further comprising, prior to exposing the non-planar substrate surface to plasma, introducing a second reactant into the reaction chamber.

5. The method of claim 4 , wherein the second reactant is an oxidant.

6. The method of claim 4 , wherein the second reactant is an nitrogen-containing reactant.

7. The method of claim 1 , wherein the doped film is a doped silicon oxide film.

8. The method of claim 1 , wherein the doped film is a doped silicon nitride film.

9. The method of claim 1 , wherein the doped film is a doped silicon carbide film.

10. The method of claim 1 , further comprising introducing a second reactant into the reaction chamber while the first reactant is adsorbed onto the non-planar substrate surface.

11. The method of claim 10 , further comprising exposing the non-planar substrate surface to plasma to drive a reaction between the first and second reactants on the substrate surface to form a portion of the film.

Continuity (9)