Multi-section heterogeneous semiconductor optical amplifier
Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.
1. A semiconductor optical amplifier (SOA) comprising:
a silicon layer comprising silicon semiconductor material and including a silicon waveguide;
a non-silicon layer comprising non-silicon semiconductor gain material and disposed on the silicon layer and including a non-silicon waveguide;
a first mode transition region comprising tapers in at least one of the silicon waveguide and/or the non-silicon waveguide to couple light from the silicon waveguide to the non-silicon waveguide;
a second mode transition region comprising tapers in at least one of the silicon waveguide and/or the non-silicon waveguide to couple light from the non-silicon waveguide to the silicon waveguide;
a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide or the non-silicon waveguide such that confinement factor for the non-silicon waveguide in at least one of the plurality of regions differ; and
at least one set of electrical contacts to inject current into the non-silicon waveguide material.
2. The SOA of claim 1 , wherein the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide further includes:
a first region disposed towards the first mode transition region and comprising a first confinement factor for the non-silicon waveguide; and
a second region disposed towards the second mode transition region and comprising a second confinement factor for the non-silicon waveguide, wherein the first confinement factor is larger than the second confinement factor.
3. The SOA of claim 1 , wherein the at least one set of electrical contacts comprises a plurality of sets of electrical contacts, each corresponding to one of the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide.
4. The SOA of claim 1 , wherein the at least one set of electrical contacts comprises a single set of electrical contacts.
5. The SOA of claim 1 , wherein the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide comprise at least one of different widths and/or heights of the silicon layer and/or the non-silicon layer.
6. The SOA of claim 1 , wherein the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide comprise processing features included in the silicon layer to alter the optical mode of the silicon waveguide.
7. The SOA of claim 2 , wherein the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide further includes:
a third region disposed between the first and second regions and comprising a third confinement factor for the non-silicon waveguide smaller than the first confinement factor and larger than the second confinement factor.
8. The SOA of claim 3 , wherein at least one of the plurality of sets of electrical contacts are to inject different current densities into the non-silicon waveguide material.
9. The SOA of claim 7 , wherein the first, second, and third regions are included separate tapered regions of the non-silicon waveguide.
10. The SOA of claim 7 , wherein the non-silicon waveguide comprises a single taper including the first, second, and third regions.
11. A wavelength division multiplexing (WDM) receiving component comprising:
a semiconductor optical amplifier (SOA) to receive and amplify an optical signal comprising a plurality of wavelengths, the SOA comprising:
a silicon layer comprising silicon semiconductor material and including a silicon waveguide;
a non-silicon layer comprising non-silicon semiconductor gain material and disposed on the silicon layer and including a non-silicon waveguide;
a first mode transition region comprising tapers in at least one of the silicon waveguide and/or the non-silicon waveguide to couple light from the silicon waveguide to the non-silicon waveguide;
a second mode transition region comprising tapers in at least one of the silicon waveguide and/or the non-silicon waveguide to couple light from the non-silicon waveguide to the silicon waveguide;
a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide or the non-silicon waveguide such that confinement factor for the non-silicon waveguide in at least one of the plurality of regions differ; and
at least one set of electrical contacts to inject current into the non-silicon waveguide material;
a (de)multiplexer to receive an amplified optical signal from the SOA and to output a separate optical signal for each of the plurality of wavelengths; and
a plurality of optical receiver modules each receiving one of the optical signals from the de-multiplexer.
12. The WDM receiving component of claim 11 , wherein the plurality of regions of the SOA disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide further includes:
a first region disposed towards the first mode transition region and comprising a first confinement factor for the non-silicon waveguide; and
a second region disposed towards the second mode transition region and comprising a second confinement factor for the non-silicon waveguide, wherein the first confinement factor is larger than the second confinement factor.
13. The WDM receiving component of claim 11 , wherein the at least one set of electrical contacts of the SOA comprises a plurality of sets of electrical contacts, each corresponding to one of the plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide.
14. The WDM receiving component of claim 11 , wherein the at least one set of electrical contacts of the SOA comprises a single set of electrical contacts.
15. The WDM receiving component of claim 11 , wherein the plurality of regions of the SOA disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide comprise at least one of different widths and/or heights of the silicon layer and/or the non-silicon layer.
16. The WDM receiving component of claim 11 , wherein the plurality of regions of the SOA disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide comprise processing features included in the silicon layer to alter the optical mode of the silicon waveguide.
17. The WDM receiving component of claim 12 , wherein the plurality of regions of the SOA disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide further includes:
a third region disposed between the first and second regions and comprising a third confinement factor for the non-silicon waveguide smaller than the first confinement factor and larger than the second confinement factor.
18. The WDM receiving component of claim 13 , wherein at least one of the plurality of sets of electrical contacts are to inject different current densities into the non-silicon waveguide material.
19. The WDM receiving component of claim 17 , wherein the first, second, and third regions are included separate tapered regions of the non-silicon waveguide.
20. The WDM receiving component of claim 17 , wherein the non-silicon waveguide comprises a single taper including the first, second, and third regions.