Selective deposition of metals, metal oxides, and dielectrics
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
1. A method for selectively depositing a dielectric material on a first dielectric surface of a substrate relative to a second metal surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ge, Si or Mg and a second reactant;
wherein the dielectric material is selected from GeO 2 , SiO 2 and MgO;
wherein the second metal surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle; and
wherein the dielectric material is selectively deposited on the first dielectric surface relative to the second metal surface with a selectivity of at least 80%.
2. The method of claim 1 , wherein the metal surface is oxidized prior to the at least one deposition cycle.
3. The method of claim 1 , wherein the metal surface is passivated prior to the at least one deposition cycle.
4. The method of claim 1 , wherein the first dielectric surface comprises SiO 2 , GeO 2 or a low-k surface.
5. The method of claim 1 , wherein the first precursor comprises a Ge-alkylamine and the second reactant is water.
6. The method of claim 1 , wherein the first precursor comprises an aminosilane precursor and the second reactant comprises ozone.
7. The method of claim 1 , wherein the first precursor comprises Mg(Cp) 2 and the second reactant is selected from water, ozone and a combination of water and ozone.
8. The method of claim 1 , wherein the dielectric material is selectively deposited on the first dielectric surface relative to the second metal surface with a selectivity of at least 90%.
9. The method of claim 8 , wherein the selectivity is retained for up to 20 deposition cycles.
10. The method of claim 1 , wherein the selectively deposited dielectric material is a GeO 2 or MgO pore sealing layer, and
wherein the first dielectric surface of a substrate comprises a porous, low-k film.
11. The method of claim 10 , wherein the metal surface comprises Cu.
12. The method of claim 10 , wherein the metal surface is oxidized prior to the at least one deposition cycle.
13. The method of claim 12 , wherein the metal surface comprises a CuO surface prior to the at least one deposition cycle.
14. The method of claim 10 , wherein the GeO 2 or MgO is deposited on the low-k film with a selectivity of greater than 90% relative to the metal surface.
15. The method of claim 14 , wherein the selectivity is retained for up to 20 deposition cycles.
16. The method of claim 10 , wherein the GeO 2 or MgO layer is deposited on the low-k film without significantly increasing the effective k value.
17. The method of claim 10 , wherein the sealing layer seals pores of about 3 nm or less in diameter.
18. A method for selectively depositing a material selected from Sb and Ge on a first metal surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
treating the second surface to provide OH, NH x , or SH x terminations; and
subsequently carrying out at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising Sb or Ge and a second reactant;
wherein the material selected from Sb and Ge is selectively deposited on the first metal surface relative to the second, different surface with a selectivity of at least 80%.
19. The method of claim 18 , wherein the first metal surface comprises Ni, Co, Cu, Al or Ru.
20. The method of claim 19 , wherein the second surface is deactivated with respect to deposition of the material selected from Sb and Ge thereon.
21. The method of claim 18 , wherein the second surface is a dielectric surface.
22. The method of claim 18 , wherein the first metal precursor comprises a Sb reactant having the formula SbX 3 , where X is a halogen.
23. The method of claim 18 , wherein the material is selectively deposited on the first metal surface relative to the second surface with a selectivity of at least 90%.
24. The method of claim 23 , wherein the selectivity is retained at least until material of up to 5 nm thickness is deposited.
25. A method for selectively depositing a metal or metal oxide material on a first dielectric surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ni, Fe or Co and a second reactant, and
wherein the second, different surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle; and
wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 80%;
wherein the metal or metal oxide is selected from Ni, Fe, Co, NiO x , FeO x , and CoO x .
26. The method of claim 25 , wherein the first dielectric surface comprises SiO 2 , GeO 2 or a low-k surface.
27. The method of claim 25 , wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 90%.