APPARATUS AND METHODS FOR PRODUCING SILICON-INGOTS

1 . An apparatus for the production of ingots comprising:

a chamber to provide a controllable atmosphere, wherein the chamber has a top and a bottom spaced apart from each other in a longitudinal direction;

a rotatable support for supporting a seed layer, wherein the rotatable support is movable in the longitudinal direction relative to the chamber,

at least one means for controlling a temperature field in a given volume of growth (V GR ) in the chamber, wherein the temperature field has a temperature gradient in the longitudinal direction, and

a feeding apparatus for controllable feeding of material onto the seed layer.

2 . The apparatus according to claim 1 , wherein the at least one means for controlling the temperature field comprises one or more independently controlled heaters arranged above the rotatable support for the seed layer.

3 . The apparatus according to claim 1 , wherein the at least one means for controlling the temperature field comprises one or more independently controlled movable insulation or heat shields.

4 . The apparatus according to claim 1 , wherein the at least one means for controlling the temperature field comprises one or more independently controlled gas inlets arranged near the rotatable support for the seed layer.

5 . The apparatus according to claim 1 , wherein the at least one means for controlling the temperature field comprises at least one top heating apparatus arranged above the rotatable support for the seed layer, wherein the top heating apparatus is designed to generate a temperature field with a temperature gradient in a direction perpendicular to the longitudinal direction.

6 . The apparatus according to claim 1 , wherein the at least one means for controlling the temperature field comprises at least one cooling apparatus.

7 . The apparatus according to claim 1 , wherein the at least one cooling apparatus comprises one or more independently controlled gas inlets arranged near the rotatable support for the seed layer.

8 . The apparatus according to claim 1 , wherein the at least one cooling apparatus comprises at least one bottom cooling apparatus arranged below the rotatable support for the seed layer.

9 . The apparatus according to claim 1 , wherein the apparatus is crucibleless.

10 . A method for the production of ingots comprising:

providing an apparatus, the apparatus comprising:

a chamber to provide a controllable atmosphere,

at least one means for controlling a temperature field with a temperature gradient in a longitudinal direction in a given volume of growth (V GR ) inside the chamber,

a rotatable support for a seed layer, the rotatable support being movable in the longitudinal direction inside the chamber, and

a controllable feeding apparatus for providing feedstock;

providing a seed layer on the rotatable support, wherein the seed layer has a predetermined cross-sectional area;

moving the rotatable support, such that the seed layer is located at a predetermined position within the volume of growth (V GR );

generating a temperature field with a predetermined vertical temperature gradient within the volume of growth (V GR );

providing an initial layer of melted silicon to substantially cover the seed layer;

rotating and lowering the rotatable support while solidifying the layer of liquid feedstock to form an ingot having a cross-sectional area; and

adding more liquid feedstock from the feeding apparatus.

11 . The method according to claim 10 , wherein a phase boundary between the ingot and liquid layer of feedstock is held substantially stationary while the rotatable support is rotated and lowered.

12 . The method according to claim 10 , wherein feedstock is continuously supplied while the rotatable support is rotated and lowered.

13 . The method according to claim 10 , wherein an average diameter of the predetermined cross-sectional area of the seed layer is smaller than an average diameter of the cross-sectional area of the ingot.

14 . The method according to claim 10 , wherein an average diameter of the predetermined cross-section of the seed layer is at least about 5% smaller than an average diameter of the cross-section of the ingot.

15 . The method according to claim 10 , wherein an average diameter of the predetermined cross-section of the seed layer is larger than an average diameter of the cross-section of the ingot.

16 . The method according to claim 10 , wherein an average diameter of the predetermined cross-section of the seed layer is at least about 5% larger than an average diameter of the cross-section of the ingot.

17 . The method according to claim 10 , further comprising independently controlling a growth behavior of the positions on the perimeter of an ingot.

18 . The method according to claim 17 , wherein the growth behavior of the perimeter of the ingot is controlled by one or more independently controlled heaters positioned near the edge of the ingot that rapidly heat up and cool down to provide phase boundary adjustments to different parts of the perimeter as the ingot rotates by the heater.

19 . The method according to claim 17 , wherein the growth behavior of the perimeter of the ingot is controlled by positioning one or more independently movable insulation or heat shields in the vicinity of one or more positions on the perimeter of the ingot in order to rapidly change the radiation view factor for different parts of the perimeter as they pass by the moving parts.

20 . The method according to claim 17 , wherein the growth behavior of the perimeter of the ingot is controlled by positioning one or more independently controlled gas inlets supplying either cool or superheated gas directed at or in the vicinity of the phase boundary between the solidified ingot and the liquid layer of feedstock and where the strength of the gas jet stream can be rapidly modified in response to a signal measured on the perimeter of the ingot as it rotates by.