Semiconductor device having structure capable of suppressing oxygen diffusion and method of manufacturing the same
A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.
1. A semiconductor device comprising:
a substrate;
a gate dielectric film formed on the substrate;
a gate electrode formed on the gate dielectric film,
source and drain electrodes, and
an interlayer insulation film configured to cover the gate electrode and the source and drain electrodes and formed with contact holes configured to lead the gate electrode and the source and drain electrodes, the contact holes being filled with a conductive material to thus form contacts,
wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion,
wherein a boundary between the gate dielectric film and the gate electrode is also formed with the F-terminated surface,
wherein boundaries between the source and drain electrodes and the contacts and boundaries between the source and drain electrodes and the interlayer insulation film are also formed with the F-terminated surface, and
wherein at least one of a boundary between the interlayer insulation film and the substrate, boundaries between the contacts and the interlayer insulation film, a boundary between the interlayer insulation film and the gate dielectric film, and a boundary between the interlayer insulation film and the gate electrode is also formed with the F-terminated surface.
2. The semiconductor device according to claim 1 , wherein the F-terminated surface is formed by a dry cleaning process of applying a plasma gas to a reaction gas comprising nitrogen, hydrogen and fluorine to generate a by-product and volatilizing the by-product.
3. The semiconductor device according to claim 2 , wherein He, Ne, Ar or N 2 plasma gas is used as the plasma gas.
4. The semiconductor device according to claim 2 , wherein NF 3 +NH 3 , NH 3 +HF or N 2 +H 2 +HF gas is used as the reaction gas.
5. The semiconductor device according to claim 1 , wherein a silicon-based dielectric material selected from a group comprising SiO x and SiN x , a metal oxide selected from a group comprising Al 2 O 3 , HfO 2 , ZrO 2 , TiO x , TaO x , LaO x , YO x and GdO x , a metal nitride or a combination thereof is used as the gate dielectric film.
6. The semiconductor device according to claim 1 , wherein a metal material selected from a group comprising Al, W, Cu, Pt, TiN, TaN, Ti, Ta and Pt or a silicon metal oxide selected from a group comprising doped Si, WSi x , NiSi x , CoSi x and TiSi x is used as the gate electrode.
7. The semiconductor device according to claim 3 , wherein a compound selected from a group comprising SiO x , SiN x , SiCO x , SiCO x N y , SiCO x H y and a combination thereof is used as the interlayer insulation film.