Semiconductor device and method of manufacturing the same
In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.
1. A semiconductor device having a first MISFET and a second MISFET formed over a semiconductor substrate, the semiconductor device comprising:
(a) the first MISFET including
(a1) a first gate insulating film formed over the semiconductor substrate;
(a2) a first gate electrode formed over the first gate insulating film; and
(a3) a first semiconductor region formed in the semiconductor substrate, the first semiconductor region being located at one side of the first gate electrode;
(b) the second MISFET including
(b1) a second gate insulating film formed over the semiconductor substrate, a thickness of the second gate insulating film being thicker than a thickness of the first gate insulating film;
(b2) a second gate electrode formed over the second gate insulating film and formed of a first conductive film of a same layer as a layer of the first gate electrode; and
(b3) a second semiconductor region and a third semiconductor region formed in the semiconductor substrate, the second semiconductor region and third semiconductor region being located at both sides of the second gate electrode respectively;
(c) an insulating film formed over the first MISFET and the second MISFET;
(d) a first plug formed in the insulating film and electrically connected to the first semiconductor region;
(e) a second plug formed in the insulating film and electrically connected to the second semiconductor region;
(f) a third plug formed in the insulating film and electrically connected to the third semiconductor region;
(g) a first wiring layer formed over the insulating film and electrically connected to the first plug;
(h) a second wiring layer formed over the insulating film and electrically connected to the second plug, the second wiring layer being formed of a second conductive film of a same layer as a layer of the first wiring layer; and
(i) a third wiring layer formed over the insulating film and electrically connected to the third plug, the third wiring layer being formed of the second conductive film of the same layer as that of the first wiring layer and the second wiring layer,
wherein the first gate electrode is overlapped with the first wiring layer in a plan view,
wherein the second wiring layer is spaced away from the second gate electrode in the plan view, and
wherein the third wiring layer is spaced away from the second gate electrode in the plan view.
2. The semiconductor device according to claim 1 ,
wherein the first wiring layer, the second wiring layer, and the third wiring layer constitute a wiring layer of a lowest layer.
3. The semiconductor device according to claim 1 , further comprising:
a first silicide film located on the first semiconductor region;
a second silicide film located on the second semiconductor region; and
a third silicide film located on the third semiconductor region,
wherein the first plug is directly connected to the first silicide film,
wherein the first wiring layer is directly connected to the first plug,
wherein the second plug is directly connected to the second silicide film,
wherein the second wiring layer is directly connected to the second plug,
wherein the third plug is directly connected to the third silicide film, and
wherein the third wiring layer is directly connected to the third plug.
4. The semiconductor device according to claim 1 , further comprising:
a first electric field relaxing insulation region formed over the second semiconductor region; and
a second electric field relaxing insulation region formed over the third semiconductor region,
wherein one side of the second gate electrode extends onto the first electric field relaxing region,
wherein the other side of the second gate electrode extends onto the second electric field relaxing region, and
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region protrude from the semiconductor substrate.
5. The semiconductor device according to claim 4 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by embedding an insulation material into a trench formed in the semiconductor substrate.
6. The semiconductor device according to claim 4 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by a selective oxidation method.
7. A semiconductor device having a first MISFET and a second MISFET formed over a semiconductor substrate, the semiconductor device comprising:
(a) the first MISFET including
(a1) a first gate insulating film formed over the semiconductor substrate;
(a2) a first gate electrode formed over the first gate insulating film; and
(a3) a first semiconductor region formed in the semiconductor substrate, the first semiconductor region being located at one side of the first gate electrode;
(b) the second MISFET including
(b1) a second gate insulating film formed over the semiconductor substrate, a thickness of the second gate insulating film being thicker than a thickness of the first gate insulating film;
(b2) a second gate electrode formed over the second gate insulating film and formed of a first conductive film of a same layer as a layer of the first gate electrode; and
(b3) a second semiconductor region and a third semiconductor region formed in the semiconductor substrate, the second semiconductor region and third semiconductor region being located at both sides of the second gate electrode respectively;
(c) an insulating film formed over the first MISFET and the second MISFET;
(d) a first plug formed in the insulating film and electrically connected to the first semiconductor region;
(e) a second plug formed in the insulating film and electrically connected to the second semiconductor region;
(f) a third plug formed in the insulating film and electrically connected to the third semiconductor region;
(g) a first wiring layer formed over the insulating film and electrically connected to the first plug;
(h) a second wiring layer formed over the insulating film and electrically connected to the second plug, the second wiring layer being formed of a second conductive film of a same layer as the first wiring layer; and
(i) a third wiring layer formed over the insulating film and electrically connected to the third plug, the third wiring layer being formed of the second conductive film of the same layer as the first wiring layer and the second wiring layer,
wherein the first gate electrode is overlapped with the first wiring layer in a plan view,
wherein the second wiring layer has no portion overlapping with the second gate electrode in the plan view, and
wherein the third wiring layer has no portion overlapping with the second gate electrode in the plan view.
8. The semiconductor device according to claim 7 ,
wherein the first wiring layer, the second wiring layer, and the third wiring layer constitute a wiring layer of a lowest layer.
9. The semiconductor device according to claim 7 , further comprising:
a first silicide film located on the first semiconductor region;
a second silicide film located on the second semiconductor region; and
a third silicide film located on the third semiconductor region,
wherein the first plug is directly connected to the first silicide film,
wherein the first wiring layer is directly connected to the first plug,
wherein the second plug is directly connected to the second silicide film,
wherein the second wiring layer is directly connected to the second plug,
wherein the third plug is directly connected to the third silicide film, and
wherein the third wiring layer is directly connected to the third plug.
10. The semiconductor device according to claim 7 , further comprising:
a first electric field relaxing insulation region formed over the second semiconductor region; and
a second electric field relaxing insulation region formed over the third semiconductor region,
wherein one side of the second gate electrode extends onto the first electric field relaxing region,
wherein the other side of the second gate electrode extends onto the second electric field relaxing region, and
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region protrude from the semiconductor substrate.
11. The semiconductor device according to claim 10 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by embedding an insulation material into a trench formed in the semiconductor substrate.
12. The semiconductor device according to claim 10 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by a selective oxidation method.
13. A semiconductor device having a first MISFET and a second MISFET formed over a semiconductor substrate, the semiconductor device comprising:
(a) the first MISFET including
(a1) a first gate insulating film formed over the semiconductor substrate;
(a2) a first gate electrode formed over the first gate insulating film; and
(a3) a first semiconductor region formed in the semiconductor substrate, the first semiconductor region being located at one side of the first gate electrode;
(b) the second MISFET including
(b1) a second gate insulating film formed over the semiconductor substrate, a thickness of the second gate insulating film being thicker than a thickness of the first gate insulating film;
(b2) a second gate electrode formed over the second gate insulating film and formed of a first conductive film of a same layer as a layer of the first gate electrode; and
(b3) a second semiconductor region and a third semiconductor region formed in the semiconductor substrate, the second semiconductor region and third semiconductor region being located at both sides of the second gate electrode, respectively;
(c) an insulating film formed over the first MISFET and the second MISFET;
(d) a first plug formed in the insulating film and electrically connected to the first semiconductor region;
(e) a second plug formed in the insulating film and electrically connected to the second semiconductor region;
(f) a third plug formed in the insulating film and electrically connected to the third semiconductor region;
(g) a first wiring layer formed over the insulating film and electrically connected to the first plug;
(h) a second wiring layer formed over the insulating film and electrically connected to the second plug, the second wiring layer being formed of a second conductive film of a same layer as the first wiring layer; and
(i) a third wiring layer formed over the insulating film and electrically connected to the third plug, the third wiring layer being formed of the second conductive film of the same layer as the first wiring layer and the second wiring layer,
wherein the first gate electrode is overlapped with the first wiring layer in a plan view,
wherein the second wiring layer is not overlapped with the second gate electrode in the plan view, and
wherein the third wiring layer is not overlapped with the second gate electrode in the plan view.
14. The semiconductor device according to claim 13 ,
wherein the first wiring layer, the second wiring layer, and the third wiring layer constitute a wiring layer of a lowest layer.
15. The semiconductor device according to claim 13 , further comprising:
a first silicide film located on the first semiconductor region;
a second silicide film located on the second semiconductor region; and
a third silicide film located on the third semiconductor region,
wherein the first plug is directly connected to the first silicide film,
wherein the first wiring layer is directly connected to the first plug,
wherein the second plug is directly connected to the second silicide film,
wherein the second wiring layer is directly connected to the second plug,
wherein the third plug is directly connected to the third silicide film, and
wherein the third wiring layer is directly connected to the third plug.
16. The semiconductor device according to claim 13 , further comprising:
a first electric field relaxing insulation region formed over the second semiconductor region; and
a second electric field relaxing insulation region formed over the third semiconductor region,
wherein one side of the second gate electrode extends onto the first electric field relaxing region,
wherein the other side of the second gate electrode extends onto the second electric field relaxing region, and
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region protrude from the semiconductor substrate.
17. The semiconductor device according to claim 16 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by embedding an insulation material into a trench formed in the semiconductor substrate.
18. The semiconductor device according to claim 16 ,
wherein the first electric field relaxing insulation region and the second electric field relaxing insulation region are formed by a selective oxidation method.