Systems, methods, and apparatus for memory cells with common source lines
Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.
1. A method comprising:
receiving a first voltage at a first transistor, the first transistor coupled to a second transistor, the first transistor and second transistor included in a first memory cell;
receiving a second voltage at a third transistor, the third transistor coupled to a fourth transistor, the third transistor and fourth transistor included in a second memory cell, the first memory cell and the second memory cell coupled to a common source line;
receiving a third voltage at the second transistor and at the fourth transistor; and
receiving a fourth voltage at the first transistor, the fourth voltage causing, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer included in the first transistor.
2. The method of claim 1 , wherein the third voltage causes the second transistor and fourth transistor to operate in cutoff mode.
3. The method of claim 1 , wherein the second transistor and the fourth transistor each have a channel length of between about 100 nm and 180 nm.
4. The method of claim 1 further comprising:
receiving a fifth voltage at the second transistor and the fourth transistor via the common source line.
5. The method of claim 4 , wherein the fifth voltage is between about −0.5V and −5V.
6. The method of claim 1 , wherein the first voltage is between about −0.5V and −5V, wherein the second voltage is between about 0.5V and 5V, and wherein a difference between the first voltage and the fourth voltage is between about 4V and 12V.
7. The method of claim 1 , wherein the third voltage is between about −0.5V and −5V.
8. The method of claim 1 , wherein the first transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor.
9. The method of claim 8 , wherein the fourth voltage causes, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer of the SONOS transistor.
10. The method of claim 8 , wherein the charge storage layer comprises at least one material selected from the group consisting of: silicon oxy-nitride, aluminum oxide, hafnium oxide, hafnium aluminum oxide, zirconium oxide, hafnium silicate, zirconium silicate, hafnium oxy-nitride, hafnium zirconium oxide, and lanthanum oxide.
11. A device comprising:
a first transistor configured to receive a first voltage via a first bit line;
a second transistor coupled to the first transistor and a common source line;
a third transistor configured to receive a second voltage via a second bit line; and
a fourth transistor coupled to the third transistor and the common source line,
wherein the first transistor includes a charge storage layer configured to change one or more electrical properties via Fowler-Nordheim tunneling in response to receiving the first voltage and a fourth voltage, the fourth voltage received at the first transistor.
12. The device of claim 11 , wherein the second transistor and the fourth transistor are configured to operate in a cutoff mode in response to receiving a third voltage during programming of the first transistor, wherein the first transistor and the second transistor are included in a first memory cell, wherein the third transistor and the fourth transistor are included in a second memory cell, wherein the first memory cell is included in a first row and a first column of a memory cell array, and wherein the second memory cell is included in the first row and a second column of the memory cell array.
13. The device of claim 12 , wherein the common source line is coupled to all memory cells in the first row of the memory cell array.
14. The device of claim 11 , wherein the second transistor and the fourth transistor each have a channel length that is between about 25 nm and 180 nm.
15. The device of claim 11 , wherein the first transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor.
16. The device of claim 15 , wherein the fourth voltage causes, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer of the SONOS transistor.
17. A system comprising:
voltage control circuitry configured to generate a first voltage, a second voltage, a third voltage, and a fourth voltage;
a memory device coupled to the voltage control circuitry, the memory device including at least a first memory cell and a second memory cell coupled to a common source line, the first memory cell including a first transistor coupled to a second transistor, the second memory cell including a third transistor coupled to a fourth transistor, and wherein in response to an initiation of a programming operation, the memory device is configured to:
receive the first voltage at the first transistor;
receive the second voltage at the third transistor;
receive the third voltage at the second transistor and at the fourth transistor; and
receive the fourth voltage at the first transistor, the fourth voltage causing, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a charge storage layer included in the first transistor.
18. The system of claim 17 , wherein the third voltage causes the second transistor and fourth transistor to operate in cutoff mode, wherein the first memory cell is included in a first row and a first column of the memory device, and wherein the second memory cell is included in the first row and a second column of the memory device.
19. The system of claim 17 , wherein the first transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor.
20. The system of claim 19 , wherein the fourth voltage causes, via Fowler-Nordheim tunneling, a change in one or more electrical properties of a nitride layer of the SONOS transistor.