RF package with non-gaseous dielectric material
View Patent ↗An RF package including: an RF circuit; a non-gaseous dielectric material coupled to the RF circuit, and having a thickness based on a magnetic field in the RF circuit; and an encapsulant material coupled to cover the RF circuit and non-gaseous dielectric material on at least one side of the RF circuit. A package manufacturing method, including: identifying an RF circuit; dispensing a non-gaseous dielectric material upon the RF circuit, wherein at least a portion of the non-gaseous dielectric material has a thickness based on a magnetic field in the RF circuit; and covering the RF circuit and non-gaseous dielectric material with an encapsulant material on at least one side of the RF circuit.
1. A package comprising:
an RF circuit;
a non-gaseous dielectric material coupled to the RF circuit, and having a thickness based on a magnetic field in the RF circuit; and
an encapsulant material coupled to cover the RF circuit and non-gaseous dielectric material on at least one side of the RF circuit.
2. The package of claim 1 :
wherein the dielectric material is a low-k dielectric material.
3. The package of claim 1 :
wherein a dielectric constant of the dielectric material is less than a dielectric constant of the encapsulant material.
4. The package of claim 1 :
wherein the circuit includes active elements and passive elements; and
wherein the dielectric material does not cover all of the passive elements.
5. The package of claim 1 :
further comprising a lead-frame and a set of bond-wires;
wherein a first bond-wire couples the circuit to the lead-frame;
wherein the dielectric material completely covers a second bond-wire; and
wherein the encapsulant further covers the first bond-wire, the second bond-wire and a portion of the lead-frame.
6. The package of claim 5 :
further comprising a second circuit completely covered by the dielectric material; and
wherein the second bond-wire couples the RF circuit to the second circuit.
7. The package of claim 1 :
wherein the RF circuit includes a device operating at a frequency of at least 1 GHz.
8. The package of claim 1 :
wherein the circuit is a semiconductor die.
9. The package of claim 1 :
wherein the encapsulant material is coupled to encapsulate the RF circuit and non-gaseous dielectric material.
10. The package of claim 1 :
wherein the thickness is at least 20 μm.
11. A package comprising:
an RF circuit having a first portion and a second portion;
a non-gaseous dielectric material coupled only to the first portion of the RF circuit; and
an encapsulant material coupled to cover the RF circuit and non-gaseous dielectric material on at least one side of the RF circuit.